Биполярный транзистор MMDT3904VC
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMDT3904VC
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 0.2
A
Граничная частота коэффициента передачи тока (ft): 300
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
SOT563
Аналоги (замена) для MMDT3904VC
MMDT3904VC
Datasheet (PDF)
..1. Size:219K diodes
mmdt3904vc.pdf MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case: SOT563 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev
5.1. Size:175K diodes
mmdt3904v.pdf MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) BC "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1
5.2. Size:226K mcc
mmdt3904v sot-563.pdf MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra
5.3. Size:221K mcc
mmdt3904v.pdf MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra
5.4. Size:1354K jiangsu
mmdt3904v.pdf JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60
5.5. Size:991K cn cbi
mmdt3904v.pdf Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector
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