Биполярный транзистор MMDT3906VC
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMDT3906VC
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 0.2
A
Граничная частота коэффициента передачи тока (ft): 300
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT563
Аналоги (замена) для MMDT3906VC
MMDT3906VC
Datasheet (PDF)
..1. Size:207K diodes
mmdt3906vc.pdf MMDT3906VCLead-free GreenDUAL PNP SMALL SIGNAL SURFACE MOUNTTRANSISTORFeatures Epitaxial Planar Die ConstructionA Ideal for Low Power Amplification and SwitchingC1 B2 E2 Ultra-Small Surface Mount PackageSOT-563 Lead Free By Design/RoHS Compliant (Note 1)BC Dim Min Max Typ "Green" Device (Note 4)A0.15 0.30 0.25E1 B1 C2B1.10 1.25 1.20Mechanic
5.1. Size:178K diodes
mmdt3906v.pdf MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) BC Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20
5.2. Size:736K mcc
mmdt3906v.pdf MMDT3906VFeatures Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Oth
5.3. Size:229K mcc
mmdt3906v sot-563.pdf MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT3906VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran
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