MMDT4401 - описание и поиск аналогов

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1 Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability C B B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

MMDT4401 Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Spec

MMDT4401 NPN Plastic-Encapsulate Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power Dissipation. (0.525)REF O PCM 0.2 W (Temp.=25 C) .053(1.35) .096(2.45) .045(1.15) .085(2.15) Collector Current .018(0.46) .010(0.26) ICM 0.6 A .014(0.35) .006(0.15) C B E .006(0.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

MMDT4401 SOT-363 Dual Transistor (NPN) SOT-363 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 40 Volt FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic Te

MMDT4401 SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

RoHS COMPLIANT MMDT4401 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou

MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Ideal for Low Power Amplification and Switching Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 "Green" Device (Note 4 and 5) E2 B2 C1 C 2.00 2.20 Mechanical Data D 0.

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMDT4403 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching

MMDT4403 PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation. O PCM 0.2 W (Temp.=25 C) .053(1.35) .096(2.45) .045(1.15) .085(2.15) Collector current .018(0.46) .010(0.26) ICM - 0.6 A .014(0.35) .006(0.15) C B E .006(0.15) 2 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T DUAL TRANSISTOR (PNP+PNP) MMDT4403 SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO

MMDT4403 SOT-363 Dual Transistor (PNP) SOT-363 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5

RoHS COMPLIANT MMDT4403 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K2T Equivalent circuit 1 / 5 S-S3079 Yangzhou

Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) FEATURES SOT-363 Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current