Биполярный транзистор ZXT10N50DE6 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZXT10N50DE6
Маркировка: 619
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT26
Аналоги (замена) для ZXT10N50DE6
ZXT10N50DE6 Datasheet (PDF)
zxt10n50de6.pdf
ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 3A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 6A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 75m for a Low Equivalent On-Resistance Moisture Sensitivity: Level 1
zxt10n20de6.pdf
ZXT10N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 DE6 Features Mechanical Data BVCEO > 20V Case: SOT26 IC = 3.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 19A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 55m for a Low Equivalent On-Resistance Moisture Se
zxt10n15de6.pdf
ZXT10N15DE6SuperSOT15V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=15V; RSAT = 50m ; IC= 4ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6F
zxt10p20de6.pdf
ZXT10P20DE6SuperSOT20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 96m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-
zxt10p40de6.pdf
ZXT10P40DE6 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -40V Case: SOT26 IC = -2A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = -4A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 105m for a Low Equivalent On-Resistance Moisture Sensiti
zxt1053ak.pdf
A Product Line ofDiodes IncorporatedZXT1053AKGreen75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > 75V Case: TO252 (DPAK) Case Material: Molded Plastic, "Green" Molding Compound. IC = 5A high Continuous Collector Current UL Flammability Classification Rating 94V-0 Up to 10A Peak Current Moisture Sensitivity: Level 1 pe
zxt10p12de6.pdf
ZXT10P12DE6SuperSOT12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 65m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6
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