ZXTN2007Z - описание и поиск аналогов

ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT89 Extemely low equivalent on-resistance; RS

Green ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 30V Case SOT223 IC = 7A Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

ZXTN2005ZQ 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data Case SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Case Material Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Features

A Product Line of Diodes Incorporated Green ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case SOT223 IC = 7A Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES Extremely low equivalent on-resistance; RSAT = 2