Справочник транзисторов. MMDT5401

 

Биполярный транзистор MMDT5401 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMDT5401
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT363

 Аналоги (замена) для MMDT5401

 

 

MMDT5401 Datasheet (PDF)

 ..1. Size:374K  diodes
mmdt5401.pdf

MMDT5401 MMDT5401

MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag

 ..2. Size:225K  mcc
mmdt5401 sot-363.pdf

MMDT5401 MMDT5401

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking:K4MPlastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M

 ..3. Size:527K  secos
mmdt5401.pdf

MMDT5401 MMDT5401

MMDT5401Plastic-EncapsulateElektronische BauelementeMulti-Chip (PNP+PNP) TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYPFeatures(0.65TYP) .021REF(0.525)REF* Epitaxial Planar Die Construction.053(1.35)* Complementary NPN Type Available (MMDT5551) .096(2.45).045(1.15).085(2.15).018(0.46).010(0.26)C2 B1 E1.014(0.35).006(0.15

 ..4. Size:4388K  jiangsu
mmdt5401.pdf

MMDT5401 MMDT5401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

 ..5. Size:194K  lge
mmdt5401.pdf

MMDT5401 MMDT5401

MMDT5401 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol

 ..6. Size:385K  kexin
mmdt5401.pdf

MMDT5401

SMD Type TransistorsPNP TransistorsMMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -

 ..7. Size:367K  cn yangzhou yangjie elec
mmdt5401.pdf

MMDT5401 MMDT5401

RoHS COMPLIANT MMDT5401Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou

 0.1. Size:1319K  cn cbi
mmdt5401dw.pdf

MMDT5401 MMDT5401

Plastic-Encapsulate TransistorsSOT-363DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter-Base Vo

 8.1. Size:781K  diodes
mmdt5451.pdf

MMDT5401 MMDT5401

MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary Pair: 1 5551 Type NPN Case Material: Molded Plastic, Green Molding Compound, 1 5401 Type PNP UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sens

 8.2. Size:432K  secos
mmdt5451.pdf

MMDT5401 MMDT5401

MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) A Epitaxial Planar Die Construction EL Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) BMARKING : KNM FC HJD G K

 8.3. Size:989K  jiangsu
mmdt5451.pdf

MMDT5401 MMDT5401

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 DUAL TRANSISTOR (NPN+PNP) 6FEATURES 54 Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching12 One 5551(NPN), one 5401(PNP)3MRKING:KNM MAXI

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