Справочник транзисторов. ZX5T851G

 

Биполярный транзистор ZX5T851G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: ZX5T851G
   Маркировка: X5T851
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 3 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Граничная частота коэффициента передачи тока (ft): 130 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT223

 Аналоги (замена) для ZX5T851G

 

 

ZX5T851G Datasheet (PDF)

 ..1. Size:486K  diodes
zx5t851g.pdf

ZX5T851G
ZX5T851G

A Product Line of Diodes Incorporated GreenZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 6A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 7.1. Size:108K  diodes
zx5t851a.pdf

ZX5T851G
ZX5T851G

ZX5T851A60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = 60V : RSAT = 34m ; IC = 4.5ADESCRIPTIONPackaged in the E-line outline this new 5th generation low saturation 60V NPNtransistor offers extremely low on state losses making it ideal for use in DC-DCcircuits and various driving and power management functions.FEATURESE-LINE Extemely low equivalent

 8.1. Size:407K  diodes
zx5t853g.pdf

ZX5T851G
ZX5T851G

ZX5T853G Green100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V Case: SOT223 IC = 6A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 9.1. Size:118K  diodes
zx5t849g.pdf

ZX5T851G
ZX5T851G

ZX5T849G30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223SUMMARYBVCEO = 30V : RSAT = 28m ; IC = 7ADESCRIPTIONPackaged in the SOT223 outline this new 5th generation low saturation 30VNPN transistor offers extremely low on state losses making it ideal for use inDC-DC circuits and various driving and power management functions.FEATURESSOT223 Extemely low equivalent on

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