Справочник транзисторов. ZXTN2011Z

 

Биполярный транзистор ZXTN2011Z - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: ZXTN2011Z
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 2.1 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 4.5 A
   Граничная частота коэффициента передачи тока (ft): 130 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT89

 Аналоги (замена) для ZXTN2011Z

 

 

ZXTN2011Z Datasheet (PDF)

 ..1. Size:250K  diodes
zxtn2011z.pdf

ZXTN2011Z
ZXTN2011Z

A Product Line ofDiodes IncorporatedGreen ZXTN2011Z100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 100V Case: SOT89 IC = 4.5A high Continuous Current Case material: molded plastic. Green molding compound. ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0 RCE(sat) = 31m for a low equivalent On

 6.1. Size:447K  diodes
zxtn2011g.pdf

ZXTN2011Z
ZXTN2011Z

ZXTN2011G Green100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V Case: SOT223 IC = 6A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 7.1. Size:483K  diodes
zxtn2010g.pdf

ZXTN2011Z
ZXTN2011Z

ZXTN2010G Green60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 6A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 7.2. Size:507K  diodes
zxtn2018f.pdf

ZXTN2011Z
ZXTN2011Z

ZXTN2018F60V, SOT23, NPN medium power transistorSummaryV(BR)CEV > 140V, V(BR)CEO > 60VIC(cont) = 5A RCE(sat) = 25 m typicalVCE(sat)

 7.3. Size:119K  diodes
zxtn2010a.pdf

ZXTN2011Z
ZXTN2011Z

ZXTN2010A60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = 60V : RSAT = 34m ; IC = 4.5ADESCRIPTIONPackaged in the E-line outline this new low saturation 60V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESE-LINE Extemely low equivalent on-resistance;

 7.4. Size:420K  diodes
zxtn2010z.pdf

ZXTN2011Z
ZXTN2011Z

ZXTN2010Z Green60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL RSAT = 30m for a Low Equivalent On-Resistance Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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