S 8 i O A T A SiSTO H iD ZH 6 0 i i A Y DATA SH T iSS Y T I i i V I i i S 8 8 AD SOT T I D T I A SO T A i ATi S T IT II V I V V II i V I V V i V I V V I I i II I i T T T S H ATi DiA A O TiO DiA A E1, E4B1 B4 Q1 Q4 C1, C2C3, C4B2 Q2 Q3 B3E2, E357623418ZH 6 0TH A HA A T iSTi S T V ITT I Di i i T i I i

SM-8 BIPOLAR TRANSISTOR H-BRIDGEZHB6792PRELIMINARY DATA SHEET ISSUE A MAY 1998FEATURES* Compact package* Low on state losses* Low drive requirements* Operates up to 70V supply* 1 Amp continuous rating SM-8(8 LEAD SOT223) PARTMARKING DETAIL ZHB6792ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL NPNs PNPs UNITCollector-Base Voltage VCBO 70 -70 VCollector-Emitter Voltag

ZHB6718 Green 20V BIPOLAR TRANSISTOR H-BRIDGE IN SM-8 Features Mechanical Data BJT H-Bridge Case: SM-8 (8 LEAD SOT223) 2 x NPN + 2 x PNP Case Material: Molded Plastic, Green Molding Compound; IC = 2.5A Continuous Collector Current UL Flammability Classification Rating 94V-0 NPN Transistor Moisture Sensitivity: Level 1 per J-STD-020 BVCEO >

S 8 i O A T A SiSTO H iD ZH 6 8 i i A Y DATA SH T iSS Y T I i i V I i i S 8 8 AD SOT T I D T I 8A SO T A i ATi S T IT II V I V V II i V I V V i V I V V I I i II I i T T T O TiO DiA A S H ATi DiA A E1, E4B1 B4Q1 Q4C1, C2 C3, C4B2 Q2 Q3 B3E2, E357623418ZH 6 8TH A HA A T iSTi S T V ITT I Di i i T i