2SA2012 - описание и поиск аналогов

Ordering number EN6306A 2SA2012 / 2SC5565 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2012 / 2SC5565 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized

Ordering number EN6306B 2SA2012 Bipolar Transistor http //onsemi.com ( ) 30V, 5A, Low VCE sat PNP Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT processes Large current capacity Low collector to emitter saturation voltage Ultrasmall-sized package permitting applied sets to be made small and slim

Ordering number ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High

Ordering number ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

Ordering number ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi

Ordering number ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

Ordering number ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO -12V IC -500mA 2SA2030 2SA2018 (VMT3) (EMT3) lFeatures l SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. VCE(sat) 250mA at IC=-200mA/IB=-10

2SA2017 Transistors Power Transistor (-80V, -4A) 2SA2017 Features 1) Low VCE(sat). (Typ. 0.3V at IC/IB = -2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage V

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

Ordering number EN6309D 2SA2016/2SC5569 Bipolar Transistor http //onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

Ordering number EN6307C 2SA2013/2SC5566 Bipolar Transistor http //onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

Transistors 2SA2010 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.9 0.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning o

UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Pa

2SA2018F PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 High Collector Current Dim Min Max Low VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mA A 1.50 1.70 B 0.78 A 0.82 C 0.80 0.82 L MARKING CODE D 0.28 0.32 BW 3 G 0.90 1.10 S B Top View 2 1 H 0.00 0.10 J 0.10 0.20 D K 0.35 0.41 G 3. Collector L 0.49 0

2SA2018 SOT-523 Transistor(PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat) -250mV at IC = -200mA / IB = -10mA MARKING BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12

2SA2018 PNP Genera Purpose Transistors 3 P b Lead(Pb)-Free 1 2 FEATURES SOT-523(SC-75) * A collector current is large. * Low VCE(sat). VCE(sat) -250mV @ IC = -200mA / IB = -10mA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector- Base Voltage VCBO -15 V -12 V Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO -6 V Collector Cur

SMD Type Transistors PNP Transistors 2SA2018 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 A collector current is large. Low VCE(sat). VCE(sat) -250mV at IC = -200mA / IB = -10mA 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll