Биполярный транзистор 2SA2112 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA2112
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 390 MHz
Ёмкость коллекторного перехода (Cc): 24 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: NMP
2SA2112 Datasheet (PDF)
2sa2112.pdf
Ordering number : ENN73792SA2112PNP Epitaxial Planar Silicon Transistors2SA2112High Current Switching ApplicationsApplicationsPackage Dimensions DC-DC converter, relay drivers, lamp drivers,unit : mmmotor drivers, strobes.2064A[2SA2112]Features 2.51.45 Adoption of MBIT process.6.9 1.0 Large current capacitance. Low collector-to-emitter saturation vo
2sa2112-an.pdf
Ordering number : EN7379A2SA2112Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single NMPApplicaitons DC-DC converter, relay drivers, lamp drivers, motor drivers, strobesFeatures Adoption of MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=2
2sa2117.pdf
Ordering number : ENN79062SA2117 / 2SC5934PNP / NPN Epitaxial Planar Silicon Transistors2SA2117 / 2SC5934High Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2117 / 2SC5934]4.5 Adoption of MBIT process. 10.02.8 High-speed switching.3.2 Large current capacitance. Low
2sa2030 2sa2018 2sa2119k.pdf
2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10
2sa2018 2sa2018 2sa2030 2sa2119k.pdf
2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
2sa2113.pdf
2SA2113 Transistor Medium power transistor (-30V, -2A) 2SA2113 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2.81.6TSMT32) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 (1)Base 0.3 0.6 Each
2sa2119gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SA2119GPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SOT-23) SOT-23* A collector current is large.* Collector saturation voltage is low.VCE(sat)
2sa2119tgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SA2119TGPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* A collector current is large.* Collector saturation voltage is low.VCE(sat)
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050