Ordering number : ENA1063 2SC5227ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5227AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

Ordering number : ENA1063A2SC5227ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single CPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-t

Ordering number:EN5034NPN Epitaxial Planar Silicon Transistor2SC5227VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2018B High cutoff frequency : fT=7GHz typ.[2SC5227]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3 :

SMD Type TransistorsNPN Transistors2SC5227SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5227DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF wideband low noise amplifierapp