Биполярный транзистор 2SC5347A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5347A
Маркировка: CZ
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3000 MHz
Ёмкость коллекторного перехода (Cc): 1.3 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: PCP
2SC5347A Datasheet (PDF)
2sc5347a.pdf
Ordering number : ENA1087 2SC5347ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Semi-Power Output Stage,2SC5347ALow-Noise Medium Output Amplifier ApplicationsFeatures High-frequency medium output amplification(VCE=5V, IC=50mA): fT=4.7GHz typ (f=1GHz).:S21e2=8dB typ (f=1GHz).: NF=1.8dB typ (f=1GHz).SpecificationsAbsolute
2sc5347ae 2sc5347af.pdf
Ordering number : ENA1087A2SC5347ARF Transistorhttp://onsemi.com12V, 150mA, fT=4.7GHz, NPN Single PCPFeatures High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : S21e =8dB typ (f=1GHz) 2 : NF=1.8dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag
2sc5347.pdf
Ordering number:EN5512ANPN Epitaxial Planar Silicon Transistor2SC5347High-Frequency Semi-Power Output Stage,Low-Noise Medium Output Amplifiers ApplicationsFeatures Package Dimensions High frequency medium output amplificationunit:mm(VCE=5V, IC=50mA)2038A: fT=4.7GHz typ (f=1GHz).[2SC5347]2: S21e =8dB typ (f=1GHz).4.5: NF=1.8dB typ (f=1GHz). 1.51.60.4 0
2sc5346 e.pdf
Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat
2sc5346.pdf
Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat
2sc5345sf.pdf
2SC5345SFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 2 SOT-23F Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code
2sc5343m.pdf
2SC5343MNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980M TO-92M Ordering Information Type NO. Marking Package Code 2SC5343M 5343 TO-92MAbsolute maximum ratings Ta=25C Characte
2sc5343u.pdf
2SC5343UNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 1 2 Complementary pair with 2SA1980U Ordering Information SOT-323 Type NO. Marking Package Code D 2SC5343U SOT-323 Device Code h
2sc5343e.pdf
2SC5343ENPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 2 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980E SOT-523 Ordering Information Type NO. Marking Package Code C 2SC5343E SOT-523 Device
2sc5345uf.pdf
2SC5345UFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : 2 Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response SOT-323F Ordering Information Type NO. Marking Package Code
2sc5344s.pdf
2SC5344S NPN Silicon Transistor Description Audio power amplifier application Features High h : h =100~320 FE FE C Complementary pair with 2SA1981S B E Ordering Information Part Number Marking Package SOT-23 FA 2SC5344S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Absolute maxim
2sc5343.pdf
2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5343ef.pdf
2SC5343EFNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980EF 2 SOT-523F Ordering Information Type NO. Marking Package Code C 2SC5343EF SOT-523F Devic
2sc5343-o.pdf
2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5343sf.pdf
2SC5343SFNPN Silicon TransistorDescription PIN Connection General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 2 Complementary pair with 2SA1980SF SOT-23F Ordering Information Type NO. Marking Package Code DA 2SC5343SF SOT-23F Device
2sc5342sf.pdf
2SC5342SFNPN Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979SF SOT-23F Ordering Information Type NO. Marking Package Code BA 2SC5342SF SOT-23F Device Code
2sc5345m.pdf
2SC5345MNPN Silicon TransistorDescription PIN Connection RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92M Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345M C5345
2sc5342s.pdf
2SC5342S NPN Silicon Transistor MEDIUM POWER AMPLIFIER Features Large collector current : I =500mA C Low collector saturation voltage enabling C low-voltage operation B Complementary pair with 2SA1979S E Ordering Information SOT-23 Part Number Marking Package BA 2SC5342S SOT-23 * Device Code hFE Rank Year &
2sc5343s.pdf
2SC5343S NPN Silicon Transistor GENERAL SMALL SIGNAL AMPLIFIER Features Low collector saturation voltage : V =0.25V(Max.) CE Low output capacitance : C =2pF(Typ.) obC Complementary pair with 2SA1980S B E Ordering Information SOT-23 Part Number Marking Package DA 2SC5343S SOT-23 * Device Code hFE Rank Year &
2sc5343-l.pdf
2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5342uf.pdf
2SC5342UFNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features 3 Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979UF SOT-323F Ordering Information Type NO. Marking Package Code 2SC5342UF B SOT-323F Device Code hF
2sc5342m.pdf
2SC5342MNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979M TO-92M Ordering Information Type NO. Marking Package Code 2SC5342M 5342 TO-92M Absolute maximum ratings (Ta=25C) Character
2sc5342u.pdf
2SC5342UNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features C Large collector current : IC=500mA B Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979U SOT-323 Ordering Information Type NO. Marking Package Code 2SC5342U B SOT-323 : hFE rank Absolute maximum ratings (
2sc5344.pdf
2SC5344NPN Silicon TransistorDescription PIN Connection Audio power amplifier application CBFeatures High hFE : hFE=100~320 E Complementary pair with 2SA1981 TO-92 Ordering Information Type NO. Marking Package Code 2SC5344 C5344 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO 35 VCollect
2sc5342.pdf
2SC5342NPN Silicon TransistorDescription PIN Connection Medium power amplifier CFeatures B Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979 TO-92 Ordering Information Type NO. Marking Package Code 2SC5342 C5342 TO-92 Absolute maximum ratings (Ta=25C) Cha
2sc5343-g.pdf
2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5344u.pdf
2SC5344UNPN Silicon TransistorDescription PIN Connection Audio power amplifier application Features 3 High hFE : hFE=100~320 Complementary pair with 2SA1981U 1 2Ordering Information SOT-323 Type NO. Marking Package Code F 2SC5344U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C)
2sc5345ef.pdf
2SC5345EFSemiconductor Semiconductor NPN Silicon TransistorDescription RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345
2sc5343-y.pdf
2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5345.pdf
2SC5345NPN Silicon TransistorDescription PIN Connection RF amplifier CFeatures High current transition frequency B fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : E Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92 Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5
2sc5343uf.pdf
2SC5343UFSemiconductor Semiconductor NPN Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980UF Ordering Information Type NO. Marking Package Code D 2SC5343UF SOT-323F Device Code hFE Rank
2sc5344.pdf
2SC5344 0.8A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Audio power amplifier application A High hFE=100~320 L3 Complementary to 2SA1981 3Top View C B11 22K ECLASSIFICATION OF hFE(1) DProduct-Rank 2SC5344-O 2SC5344-Y H JF GRange 100
2sc5345.pdf
2SC5345 0.02A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE RF amplifier AL High current transition frequency fT=550MHz(Typ.), 33[VCE=6V, IE=-1mA] Top ViewC B Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 1 Low base time constant and hig
2sc5343.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5343 TRANSISTOR (NPN)FEATURES Excellent hFE Linearity Low Noise1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V
2sc5344.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5344 TRANSISTOR (NPN)FEATURES1. BASE 2. EMITTER Audio power amplifier application3. COLLECTOR High hFE : hFE=100~320 Complementary to 2SA1981MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emit
2sc5343.pdf
2SC5343 TRANSISTOR (NPN)SOT-23 FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units2. EMITTER VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 150 mABase Current -Continuous Ib 50 mA
2sc5345.pdf
2SC5345TRANSISTOR (NPN)FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance : 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Va
2sc5343.pdf
2SC5343(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V Dimensions in inches and
2sc5344.pdf
2SC5344(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 30 V VEBO Emit
2sc5345.pdf
2SC5345 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Dimensions in inches and (millimeters) Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25
2sc5343 sot-23.pdf
2SC5343 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V V
2sc5344.pdf
2SC5344NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t
l2sc5343qlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesS-L2SC5343QLT1GNPN SiliconFEATURE Series Excellent hFE linearity 3:hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements.SOT 23 S- Prefix for Automotive a
l2sc5343rlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesNPN SiliconS-L2SC5343QLT1GFEATURE SeriesExcellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic
l2sc5343slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC5343QLT1GNPN Silicon SeriesS-L2SC5343QLT1GFEATURE Excellent hFE linearity Series:hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise:NF=1Db(Typ).at f=1KHz. 12 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli
2sc5344sf.pdf
SMD Type TransistorsNPN Transistors2SC5344SFSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High hFE : hFE=100~320 Complementary pair with 2SA1981SF1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter
2sc5342uf.pdf
SMD Type TransistorsNPN Transistors2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary to 2SA1979UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter -
2sc5343uf.pdf
SMD Type TransistorsNPN Transistors2SC5343UF Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary to 2SA1980UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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