Биполярный транзистор 2SC5566 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5566
Маркировка: FC
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 400 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: PCP
2SC5566 Datasheet (PDF)
2sa2013 2sc5566.pdf
Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
2sa2013 2sc5566.pdf
Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2013 2sc5566.pdf
Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sa2016 2sc5569.pdf
Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sc5565.pdf
Ordering number:ENN6306PNP/NPN Epitaxial Planar Silicon Transistors2SA2012/2SC5565DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2012/2SC5565]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-
2sa2016 2sc5569.pdf
Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
2sa2011 2sc5564.pdf
Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
2sa2014 2sc5567.pdf
Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sa2015 2sc5568.pdf
Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sa2016 2sc5569.pdf
Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sc5569.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. 1SOT-89*High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Ord
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050