Биполярный транзистор 2SC5658RM3T5G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5658RM3T5G
Маркировка: RM
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.26 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 215
Корпус транзистора: SOT723
Аналоги (замена) для 2SC5658RM3T5G
2SC5658RM3T5G Datasheet (PDF)
2sc5658m3t5g 2sc5658rm3t5g.pdf
2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR
l2sc5658rm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
2sc5658rm3.pdf
2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN
2sc5658fha.pdf
AEC-Q101 QualifiedGeneral purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHAFeatures Dimensions (Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2SC2412K 2SC40812SC2412KFRA 2SC4081FRA2. Complements the 2SA1037AK / 2SA1576A /2SA1037AKFRA / 2SA1576AFRA2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029
2sc5658.pdf
2SC2412K / 2SC4081 / 2SC4617 /Transistors 2SC5658 / 2SC1740SGeneral purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /2SC1740S External dimensions (Units : mm) Features1) Low Cob.2SC2412K 2SC4081 2SC4617Cob=2.0pF (Typ.)(1)2) Complements the 2SA1037AK /(2)(3)1.252SA1576A / 2SA1774H /1.6 0.82.12.82SA2029 / 2SA933AS.1.60.1Min. 0.1Min.
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17
2sc5658m3.pdf
2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR
nsv2sc5658m3t5g.pdf
2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR
2sc5658.pdf
2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-723 FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120~270 180~390 270~560 Marking BQ BR BS Collector 3 Millimeter M
2sc5658.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors2SC5658 General purpose transistors (NPN)SOT-723 FEATURES Low Cob Complements the 2SA20291. BASE 2. EMITTER3. COLLECTOR Marking: BQ,BR,BS Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Limit UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emit
l2sc5658qm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
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