55GN01CA - описание и поиск аналогов

Ordering number ENA1111 55GN01CA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01CA Amplifier Applications Features High cutoff frequency fT= 5.5GHz typ. High gain S21e 2=9.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V

Ordering number ENA1111A 55GN01CA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features High cutoff frequency fT=5.5GHz typ High gain S21e =9.5dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-t

55GN01FA Ordering number ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01FA Amplifier Applications Features High cut-off frequency fT=5.5GHz typ High gain S21e =11dB typ (f=1GHz) 2 =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim Halogen free compliance

Ordering number ENA1114A 55GN01MA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single MCP Features High cut-off frequency fT=5.5GHz typ High gain S21e =10dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-

DATA SHEET www.onsemi.com RF Transistor 3 1 10 V, 70 mA, fT = 5.5 GHz, NPN Single SSFP 2 SOT-623 / SSFP 55GN01FA CASE 631AC Features High Cut-off Frequency fT = 5.5 GHz Typ MARKING DIAGRAM High Gain S21e 2 = 11 dB Typ (f = 1 GHz) S21e 2 = 19 dB Typ (f = 400 MHz) Ultrasmall Package Permitting Applied Sets to be Small and Slim ZD This Device is Pb-Free