Биполярный транзистор BC337-040 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC337-040
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Граничная частота коэффициента передачи тока (ft): 210 MHz
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора: TO92
Аналоги (замена) для BC337-040
BC337-040 Datasheet (PDF)
bc337-25 bc337-40.pdf
BC337-25BC337-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC337-25 BC337-25 TO-92 / BulkBC337-25-AP BC337-25 TO-92 / AmmopackBC337-40 BC337-40 TO-92 / BulkBC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 THE PNP COMPLEMENTARY TYPES
bc337-16 bc337-25.pdf
BC337-16BC337-25E TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourced fromProcess 12. See TN3019A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCES Collector-Base Voltage
bc817 bc817-16 bc817-25 bc817-40 bc817w bc817-16w bc817-25w bc817-40w bc337 bc337-16 bc337-25 bc337-40.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc337-a bc338.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
bc337-16bk bc337-25bk bc337-40bk bc338-16bk bc338-25bk bc338-40bk.pdf
BC337-xBK / BC338-xBKBC337-xBK / BC338-xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-05-270.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9
bc337-16-25-40 bc338-16-25-40.pdf
MCCBC337-16/25/40TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsBC338-16/25/40CA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin
bc337-25-40.pdf
BC337, BC337-25,BC337-40Amplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These are Pb-Free DevicesCOLLECTOR12MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 45 Vdc3EMITTERCollector - Base Voltage VCBO 50 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 800 mAdcTotal Device Dissipation @ TA = 25
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050