BC847BP - Аналоги. Основные параметры
Наименование производителя: BC847BP
Тип материала: Si
Полярность: NPN*PNP
Максимальная рассеиваемая мощность (Pc): 0.35
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
SC88
SC70
SOT363
Аналоги (замена) для BC847BP
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подбор ⓘ биполярного транзистора по параметрам
BC847BP - технические параметры
0.1. Size:53K philips
bc847bpn 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor 1999 Apr 26 Preliminary specification Supersedes data of 1997 Jul 09 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor BC847BPN FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 e
0.2. Size:101K philips
bc847bpn.pdf 

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces
0.3. Size:101K nxp
bc847bpn.pdf 

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces
0.4. Size:110K onsemi
bc847bpdxv6 sbc847bpdxv6.pdf 

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif
0.5. Size:177K onsemi
bc847bpdw1t2g bc846bpdw1t1g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
0.6. Size:131K onsemi
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
0.7. Size:177K onsemi
bc847bpdw1t3g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
0.8. Size:114K onsemi
sbc847bpdxv6t1g.pdf 

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif
0.9. Size:177K onsemi
bc847bpdw1t1g bc848cpdw1t1g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
0.10. Size:208K onsemi
bc848cpdw1t1g bc846bpdw1t1g bc847bpdw1t1g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
0.11. Size:262K onsemi
bc846bpdw1 bc847bpdw1 bc848cpdw1.pdf 

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
0.12. Size:114K onsemi
bc847bpdxv6t1g.pdf 

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif
0.13. Size:177K onsemi
sbc847bpdw1t3g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
0.14. Size:76K onsemi
bc847bpdxv6t1-d.pdf 

BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual (Complementary) http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Lead-Free Solder Plating MAXIMUM RATINGS - NPN Q1 Q2 Rating Symbol Value Unit Collector-Emitter Vol
0.15. Size:177K onsemi
sbc847bpdw1t1g.pdf 

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
0.17. Size:172K lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
0.18. Size:172K lrc
lbc847bpdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
0.19. Size:1957K kexin
bc847bpn.pdf 

SMD Type Transistors Composite Transistors BC847BPN (KC847BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors C1 B2 E2 0.5 mm (min) PNP NPN E1 B1 C2 1.9 mm Absolute Maximum Ratings Ta = 25 Parame
0.20. Size:522K panjit
bc847bpn.pdf 

BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable SOT- 363 applications where board space is at a premium. 4 4 5 5 FEATURES 6 6 3 3 Electrically-Isolated Complimentary Transistor Pairs 2 2 Lead free in compliance with EU Ro
0.21. Size:500K dxc
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf 

Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit
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History: 2SC20