Справочник транзисторов. BCW33L

 

Биполярный транзистор BCW33L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW33L
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT23

 Аналоги (замена) для BCW33L

 

 

BCW33L Datasheet (PDF)

 0.1. Size:371K  motorola
bcw33lt1.pdf

BCW33L
BCW33L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW33LT1/DGeneral Purpose TransistorBCW33LT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current

 0.2. Size:281K  onsemi
bcw33lt1g sbcw33lt1g.pdf

BCW33L
BCW33L

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC

 0.3. Size:148K  onsemi
bcw33lt1g.pdf

BCW33L
BCW33L

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

 0.4. Size:96K  onsemi
bcw33lt1.pdf

BCW33L
BCW33L

BCW33LT1General Purpose TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 32 Vdc2Emitter - Base Voltage VEBO 5.0 Vdc EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symb

 0.5. Size:257K  onsemi
bcw33lt1-d.pdf

BCW33L
BCW33L

BCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector - Emitter Voltage VCEO 32 Vdc2Collector - Base Voltage VCBO 32 VdcEMITTEREmitter - Base Voltage VEBO 5.0 Vdc3Collector Current - Continuous IC 100 mAd

 0.6. Size:144K  onsemi
sbcw33lt1g.pdf

BCW33L
BCW33L

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

 0.7. Size:148K  onsemi
bcw33lt3g.pdf

BCW33L
BCW33L

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

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