Справочник транзисторов. BCW68GL

 

Биполярный транзистор BCW68GL - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW68GL
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: SOT23

 Аналоги (замена) для BCW68GL

 

 

BCW68GL Datasheet (PDF)

 ..1. Size:86K  onsemi
bcw68gl.pdf

BCW68GL
BCW68GL

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

 0.1. Size:82K  motorola
bcw68glt.pdf

BCW68GL
BCW68GL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW68GLT1/DGeneral Purpose TransistorBCW68GLT1PNP SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector

 0.2. Size:65K  onsemi
bcw68glt1g.pdf

BCW68GL
BCW68GL

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

 0.3. Size:108K  onsemi
bcw68glt1.pdf

BCW68GL
BCW68GL

BCW68GLT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO -45 Vdc2EMITTERCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdc3

 0.4. Size:65K  onsemi
nsvbcw68glt1g.pdf

BCW68GL
BCW68GL

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

 0.5. Size:292K  willas
bcw68glt1.pdf

BCW68GL
BCW68GL

FM120-M WILLASBCW68GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch procesPNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

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