EMX1 - описание и поиск аналогов

EMX1 / UMX1N / IMX1 Transistors General purpose transistors (dual transistors) EMX1 / UMX1N / IMX1 Features External dimensions (Units mm) 1) Two 2SC2412K chips in a EMT or UMT or SMT EMX1 package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating interference. Eac

EMX1 / UMX1N / IMX1 Datasheet General purpose transistor (dual transistors) lOutline l Parameter Tr1 and Tr2 SOT-563 SOT-363 VCEO 50V IC 150mA EMX1 UMX1N (EMT6) (UMT6) SOT-457 lFeatures l 1) Two 2SC2412K chips in a EMT, UMT or SMT package. IMX1 2) Mounting p

EMX1 0.15 W, 150 mA, 60 V Plastic-Encapsulated Elektronische Bauelemente General Purpose Transistors (Dual) RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Two 2SC2412K chips in a SOT-563 package. Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cos

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR(NPN+NPN) EMX1 SOT-563 FEATURES Two 2SC2412K chips in a SOT-563 package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area can be cutin half MARKING X1 MAXIMUM RATINGS (Ta=25 u

EMX1 General Purpose Transistors (Dual Transistors) SOT-563 1 1.600 Features Two 2SC2412K chips in a SOT-563 package. 1.200 1.600 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 0.220 Mounting cost and area can be cut in half. MARKING X1 0.500 0.565 MAXIMUM RATINGS (TA=25 unless otherwise

SMD Type Transistors Dual NPN Transistors EMX1 Unit mm SOT-563 1.20 0.10 0.05 (max) 0.20 0.10 Features 4 3 Mounting possible with SOT-563 automatic mounting machines 5 2 Transistor elements are independent, eliminating interference 6 1 Two 2SC2412K chips in a SOT-563 package 1.60 0.10 0.525 0.60 7 REF. 7 REF. Absolute Maximum Ratings Ta =

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 30 NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 FEATURES PINNING 300 mW total power dissipation PIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 Exce

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N External dimensions (Unit mm) Features 1) Two 2SC5585 chips in a EMT or UMT package. EMX18 2) Mounting possible with EMT3 or UMT3 automatic (4) (3) mounting machines. (5) (2) (6) (1) 3) Transistor elements are independent, eliminating 1.2 1.6 interference. 4) Mounting cost a

EMX18 / UMX18N Datasheet General purpose transistor (dual transistors) lOutline l Parameter Tr1 and Tr2 SOT-563 SOT-363 VCEO 12V IC 500mA EMX18 UMX18N (EMT6) (UMT6) lFeatures lInner circuit l l 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

EMX1DXV6T1G, EMX1DXV6T5G Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is www.onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER TRANSISTORS Reduces Board Space SU

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board S

CHENMKO ENTERPRISE CO.,LTD CHEMX1GP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) SOT-563 * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capabilit

CHENMKO ENTERPRISE CO.,LTD CHEMX18GP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 15 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) SOT-563 * Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capabi