Биполярный транзистор EMX1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: EMX1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.357 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT563
EMX1 Datasheet (PDF)
emx1 umx1n imx1 umx1n.pdf
EMX1 / UMX1N / IMX1TransistorsGeneral purpose transistors(dual transistors)EMX1 / UMX1N / IMX1 Features External dimensions (Units : mm)1) Two 2SC2412K chips in a EMT or UMT or SMTEMX1package.(4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3(5) (2)(6) (1)1.2automatic mounting machines.1.63) Transistor elements are independent, eliminating interference.Eac
emx1 umx1n imx1.pdf
EMX1 / UMX1N / IMX1DatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 SOT-563 SOT-363VCEO50VIC150mA EMX1 UMX1N(EMT6) (UMT6) SOT-457 lFeaturesl1) Two 2SC2412K chips in a EMT, UMT or SMT package. IMX12) Mounting p
emx1.pdf
EMX1 0.15 W, 150 mA, 60 V Plastic-Encapsulated Elektronische Bauelemente General Purpose Transistors (Dual) RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Two 2SC2412K chips in a SOT-563 package. Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cos
emx1.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate TransistorsDUAL TRANSISTOR(NPN+NPN)EMX1 SOT-563 FEATURES Two 2SC2412K chips in a SOT-563 package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area can be cutin halfMARKING:X1 MAXIMUM RATINGS (Ta=25 u
emx1.pdf
EMX1 General Purpose Transistors (Dual Transistors)SOT-5631 1.600Features Two 2SC2412K chips in a SOT-563 package. 1.200 1.600 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 0.220 Mounting cost and area can be cut in half. MARKING:X1 0.5000.565MAXIMUM RATINGS (TA=25 unless otherwise
emx1.pdf
SMD Type TransistorsDual NPN TransistorsEMX1Unit:mmSOT-5631.20 0.100.05 (max)0.20 0.10 Features4 3 Mounting possible with SOT-563 automatic mounting machines5 2 Transistor elements are independent, eliminating interference6 1 Two 2SC2412K chips in a SOT-563 package1.60 0.100.525 ~ 0.607 REF.7 REF. Absolute Maximum Ratings Ta =
pemx1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D744PEMX1NPN general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 30NXP Semiconductors Product data sheetNPN general purpose double transistor PEMX1FEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Exce
pemx1.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
emx18.pdf
EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N External dimensions (Unit : mm) Features 1) Two 2SC5585 chips in a EMT or UMT package. EMX182) Mounting possible with EMT3 or UMT3 automatic (4) (3)mounting machines. (5) (2)(6) (1)3) Transistor elements are independent, eliminating 1.21.6 interference. 4) Mounting cost a
emx18 umx18n.pdf
EMX18 / UMX18NDatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 SOT-563 SOT-363VCEO12VIC500mA EMX18 UMX18N(EMT6) (UMT6) lFeatures lInner circuitl l1)Two 2SC5585 chips in a EMT or UMT package.2)Mounting possible
emx1fha.pdf
EMX1FHA / UMX1NFHA / IMX1AEC-Q101 Qualified EMX1FHA / UMX1NFHA / IMX1
emx1dxv6t1 5 d.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
emx1dxv6t1g emx1dxv6t5g.pdf
EMX1DXV6T1G,EMX1DXV6T5GDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which iswww.onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeatures PURPOSE AMPLIFIERTRANSISTORS Reduces Board SpaceSU
emx1dxv6t5g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
emx1dxv6t1g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
nsvemx1dxv6t1g.pdf
EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S
chemx1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabilit
chemx18gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX18GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 15 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050