MBT3906DW1 - Аналоги. Основные параметры
Наименование производителя: MBT3906DW1
Маркировка: A2
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-88 SC-70 SOT-363
Аналоги (замена) для MBT3906DW1
MBT3906DW1 - технические параметры
mbt3906dw1 smbt3906dw1.pdf
MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat
mbt3906dw1.pdf
MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 www.onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount MARKING applications whe
mbt3906dw1t2g.pdf
MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat
mbt3906dw1t1g smbt3906dw1t1g.pdf
MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
Другие транзисторы... EMX2DXV6 , EMZ1 , FH102A , HN1B01FDW1 , IMH20TR1 , MBT2222ADW1T1 , MBT35200 , MBT3904DW1 , BD335 , MBT3946DW1T1 , MBT6429DW1 , MCH3007 , MCH4009 , MCH4014 , MCH4015 , MCH4016 , MCH4017 .
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