Биполярный транзистор MBT3906DW1 Даташит. Аналоги
Наименование производителя: MBT3906DW1
Маркировка: A2
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-88 SC-70 SOT-363
- подбор биполярного транзистора по параметрам
MBT3906DW1 Datasheet (PDF)
mbt3906dw1 smbt3906dw1.pdf

MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
mbt3906dw1.pdf

MBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363www.onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountMARKINGapplications whe
mbt3906dw1t2g.pdf

MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
mbt3906dw1t1g smbt3906dw1t1g.pdf

MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: C2383A-R | CHUMT1GP | BC183CP | BC183K | 2SB902 | 2N5606 | ME0401
History: C2383A-R | CHUMT1GP | BC183CP | BC183K | 2SB902 | 2N5606 | ME0401



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