Справочник транзисторов. MJL21195

 

Биполярный транзистор MJL21195 Даташит. Аналоги


   Наименование производителя: MJL21195
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 200 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO3PBL TO264
 
   - подбор ⓘ биполярного транзистора по параметрам

 

MJL21195 Datasheet (PDF)

 ..1. Size:129K  onsemi
mjl21195 mjl21196.pdfpdf_icon

MJL21195

MJL21195 (PNP),MJL21196 (NPN)Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 A COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linearity

 ..2. Size:247K  inchange semiconductor
mjl21195.pdfpdf_icon

MJL21195

Silicon PNP Power Transistor MJL21195DESCRIPTIONExcellent Safe Operating AreaDC Current Gain: h = 20-80@I = -8A,V = -5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output, d

 0.1. Size:123K  onsemi
mjl21195g.pdfpdf_icon

MJL21195

MJL21195, MJL21196Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 A COMPLEMENTARY Excellent Gain Linearity

 0.2. Size:386K  cn evvo
mjl21195g.pdfpdf_icon

MJL21195

MJL21195Transistor Silicon PNP Epitaxial TypeMJL21195Power Amplifier Applications Complementary to MJL21196 High collector voltage:VCEO=-250V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.)

Другие транзисторы... MJE15035 , MJF31C , MJF32C , MJF44H11 , MJF45H11 , MJL1302A , MJL21193 , MJL21194 , 2SC828 , MJL21196 , MJL3281A , MJL4281A , MJL4302A , MJW1302A , MJW18020 , MJW21193 , MJW21194 .

History: 2SD1020O

 

 
Back to Top

 


 
.