Биполярный транзистор MJL21195 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJL21195
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO3PBL TO264
MJL21195 Datasheet (PDF)
mjl21195 mjl21196.pdf
MJL21195 (PNP),MJL21196 (NPN)Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 A COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linearity
mjl21195.pdf
Silicon PNP Power Transistor MJL21195DESCRIPTIONExcellent Safe Operating AreaDC Current Gain: h = 20-80@I = -8A,V = -5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output, d
mjl21195g.pdf
MJL21195, MJL21196Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 A COMPLEMENTARY Excellent Gain Linearity
mjl21193 mjl21194.pdf
Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technolog
mjl21193 mjl21194.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
mjl21196g.pdf
MJL21195, MJL21196Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 A COMPLEMENTARY Excellent Gain Linearity
mjl21194g.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
mjl21193g.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
mjl21194.pdf
SPTECH Product SpecificationSPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL packageComplement to type MJL21193Excellent gain linearityAPPLICATIONS Designed for high power audio output,diskhead positioners and linear applicationsPINNINGPIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E
mjl21193.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194APPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL
mjl21194.pdf
isc Silicon NPN Power Transistor MJL21194DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear app
mjl21193.pdf
isc Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear ap
mjl21196.pdf
isc Silicon NPN Power Transistor MJL21196DESCRIPTIONExcellent Safe Operating AreaDC Current Gain: h = 20-80@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21195Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output, di
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