MJL21196 - описание и поиск аналогов

 ..1. Size:129K  onsemi
 mjl21195 mjl21196.pdf 

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 A COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linearity

 ..2. Size:228K  inchange semiconductor
 mjl21196.pdf 

isc Silicon NPN Power Transistor MJL21196 DESCRIPTION Excellent Safe Operating Area DC Current Gain h = 20-80@I = 8A,V = 5V FE C CE Collector-Emitter Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to the PNP MJ21195 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output, di

 0.1. Size:123K  onsemi
 mjl21196g.pdf 

MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY Excellent Gain Linearity

 0.2. Size:386K  cn evvo
 mjl21196g.pdf 

MJL21196 Transistor Silicon NPN Triple Diffused Type MJL21196 Power Amplifier Applications Complementary to MJL21195 High collector voltage VCEO=250V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature,

 7.1. Size:159K  motorola
 mjl21193 mjl21194.pdf 

Order this document MOTOROLA by MJL21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN Silicon Power Transistors * MJL21194 The MJL21193 and MJL21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Char

 7.2. Size:116K  onsemi
 mjl21193 mjl21194.pdf 

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea

 7.3. Size:123K  onsemi
 mjl21195g.pdf 

MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY Excellent Gain Linearity

 7.4. Size:120K  onsemi
 mjl21194g.pdf 

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea

 7.5. Size:120K  onsemi
 mjl21193g.pdf 

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea

 7.6. Size:1309K  jilin sino
 mjl21194 mjl21193.pdf 

Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN-P

 7.7. Size:386K  cn evvo
 mjl21195g.pdf 

MJL21195 Transistor Silicon PNP Epitaxial Type MJL21195 Power Amplifier Applications Complementary to MJL21196 High collector voltage VCEO=-250V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.)

 7.8. Size:425K  cn sptech
 mjl21194.pdf 

SPTECH Product Specification SPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL package Complement to type MJL21193 Excellent gain linearity APPLICATIONS Designed for high power audio output,disk head positioners and linear applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E

 7.9. Size:173K  cn sptech
 mjl21193.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL

 7.10. Size:216K  inchange semiconductor
 mjl21194.pdf 

isc Silicon NPN Power Transistor MJL21194 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear app

 7.11. Size:247K  inchange semiconductor
 mjl21195.pdf 

Silicon PNP Power Transistor MJL21195 DESCRIPTION Excellent Safe Operating Area DC Current Gain h = 20-80@I = -8A,V = -5V FE C CE Collector-Emitter Saturation Voltage- V )= -1.0 V(Max)@ I = -8A CE(sat C Complement to the NPN MJ21196 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output, d

 7.12. Size:216K  inchange semiconductor
 mjl21193.pdf 

isc Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear ap