Справочник транзисторов. MMBT5089L

 

Биполярный транзистор MMBT5089L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT5089L
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Статический коэффициент передачи тока (hfe): 400
   Корпус транзистора: SOT23

 Аналоги (замена) для MMBT5089L

 

 

MMBT5089L Datasheet (PDF)

 ..1. Size:183K  onsemi
mmbt5088l mmbt5089l.pdf

MMBT5089L MMBT5089L

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value UnitCOL

 0.1. Size:125K  onsemi
mmbt5089lt1g.pdf

MMBT5089L MMBT5089L

MMBT5088LT1G,SMMBT5088LT1G,MMBT5089LT1G,SMMBT5089LT1GLow Noise Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant

 0.2. Size:192K  onsemi
mmbt5088lt1 mmbt5089lt1g.pdf

MMBT5089L MMBT5089L

MMBT5088LT1G,MMBT5089LT1GLow Noise TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBT5088 30MMBT5089 25Collector-Base Voltage VCBO Vdc3SOT-23 (TO-236)MMBT5088 35MMBT5089 30 CASE 31

 6.1. Size:298K  motorola
mmbt5088 mmbt5089.pdf

MMBT5089L MMBT5089L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5088LT1/DMMBT5088LT1Low Noise Transistors*MMBT5089LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 5088LT1 5089LT1 Unit2CollectorEmitter Voltage VCEO 30 25 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 35 30 VdcSOT23 (TO236A

 6.2. Size:97K  fairchild semi
2n5088 mmbt5088 2n5089 mmbt5089.pdf

MMBT5089L MMBT5089L

2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO

 6.3. Size:2148K  kexin
mmbt5089.pdf

MMBT5089L MMBT5089L

SMD Type TransistorsNPN TransistorsMMBT5089 (KMBT5089)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

 6.4. Size:352K  cn shikues
mmbt5089.pdf

MMBT5089L MMBT5089L

NPN General Purpose Amplifier For low noise, high gain, general purpose amplifierFor low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50mA. applications at collector currents from 1A to 50mA. 1: Base 2: Emitter 3: Collector1: Base 2: Emitter 3: Collector Marking:Marking: 1RM SOT-23 Plastic Package23 Plastic Package Absolu

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