Справочник транзисторов. NSS12100M3T5G

 

Биполярный транзистор NSS12100M3T5G Даташит. Аналоги


   Наименование производителя: NSS12100M3T5G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.48 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT723
 
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NSS12100M3T5G Datasheet (PDF)

 ..1. Size:82K  onsemi
nss12100m3t5g.pdfpdf_icon

NSS12100M3T5G

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 4.1. Size:82K  onsemi
nss12100m3.pdfpdf_icon

NSS12100M3T5G

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.1. Size:63K  onsemi
nss12100uw3tcg.pdfpdf_icon

NSS12100M3T5G

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.2. Size:100K  onsemi
nss12100xv6.pdfpdf_icon

NSS12100M3T5G

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

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