Биполярный транзистор NSS12100M3T5G Даташит. Аналоги
Наименование производителя: NSS12100M3T5G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.48 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT723
NSS12100M3T5G Datasheet (PDF)
nss12100m3t5g.pdf

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
nss12100m3.pdf

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
nss12100uw3tcg.pdf

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss12100xv6.pdf

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
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