Справочник транзисторов. NSS12200L

 

Биполярный транзистор NSS12200L Даташит. Аналоги


   Наименование производителя: NSS12200L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.71 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: SOT23
 

 Аналог (замена) для NSS12200L

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NSS12200L Datasheet (PDF)

 ..1. Size:192K  onsemi
nss12200l.pdfpdf_icon

NSS12200L

NSS12200L12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.www.onsemi.comT

 0.1. Size:122K  onsemi
nss12200lt1g.pdfpdf_icon

NSS12200L

NSS12200LT1G12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 6.1. Size:179K  onsemi
nss12200wt1g.pdfpdf_icon

NSS12200L

NSS12200WT1GLow VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTSwhere affordable e

 6.2. Size:105K  onsemi
nss12200w.pdfpdf_icon

NSS12200L

NSS12200WT1G12 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important

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History: BF161 | BTD5974B3 | BTP2907SL3 | DTC115EM3 | BTP955M3 | NSBC123JDXV6T5G | 2SD36

 

 
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