Биполярный транзистор NSS30101LT1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS30101LT1G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.71
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора:
SOT23
Аналоги (замена) для NSS30101LT1G
NSS30101LT1G
Datasheet (PDF)
7.1. Size:107K onsemi
nss30100lt1g.pdf NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.
9.1. Size:150K onsemi
nss30071mr6t1g.pdf NSS30071MR6T1G30 V, 0.7 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
9.2. Size:65K onsemi
nss30201mr6t1g.pdf NSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
9.3. Size:204K onsemi
nss30201mr6t1g snss30201mr6t1g.pdf NSS30201MR6T1G,SNSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications 30 VOLTSwhere affordable efficien
9.4. Size:64K onsemi
nss30070mr6t1g.pdf NSS30070MR6T1G30 V, 0.7 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
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