Биполярный транзистор NSS40501UW3
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS40501UW3
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 7
A
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора: WDFN-3
Аналоги (замена) для NSS40501UW3
NSS40501UW3
Datasheet (PDF)
..1. Size:163K onsemi
nss40501uw3 nsv40501uw3.pdf NSS40501UW3,NSV40501UW340 V, 5.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy contr
0.1. Size:80K onsemi
nss40501uw3t2g.pdf NSS40501UW3T2G40 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
0.2. Size:79K onsemi
nss40501uw3-d.pdf NSS40501UW3T2G40 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.1. Size:108K onsemi
nss40500uw3t2g.pdf NSS40500UW3T2G40 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
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