NST3904DP6 - Даташиты. Аналоги. Основные параметры
Наименование производителя: NST3904DP6
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.42 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-963
Аналоги (замена) для NST3904DP6
NST3904DP6 Datasheet (PDF)
nst3904dp6.pdf
NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
nst3904dp6t5g.pdf
NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for low-power surface mount application
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf
Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G www.onsemi.com The NST/NSV3904DXV6 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 (3) (2) (1) six-leaded surface mount package. By putting two discrete devices in one package, this device is ide
nst3904dxv6t1-5.pdf
NST3904DXV6T1, NST3904DXV6T5 Dual General Purpose Transistor The NST3904DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power su
Другие транзисторы... NSS40501UW3 , NSS40600CF8 , NSS40601CF8 , NSS60200LT1G , NSS60201LT1G , NSS60600 , NSS60601MZ4 , NST30010MXV6 , BC337 , NST3904DXV6 , NST3904F3T5G , NST3906DP6 , NST3906DXV6 , NST3906F3T5G , NST3946DP6 , NST3946DXV6 , NST45010 .
History: IMH10A | NSP596 | FMMT4355
History: IMH10A | NSP596 | FMMT4355
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