NST3906DP6 datasheet, аналоги, основные параметры
Наименование производителя: NST3906DP6 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.42 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT-963
📄📄 Копировать
Аналоги (замена) для NST3906DP6
- подборⓘ биполярного транзистора по параметрам
NST3906DP6 даташит
nst3906dp6.pdf
NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
nst3906dp6t5g.pdf
NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
nst3906dxv6t1 nst3906dxv6t5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
nst3906dxv6t1-5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
Другие транзисторы: NSS60200LT1G, NSS60201LT1G, NSS60600, NSS60601MZ4, NST30010MXV6, NST3904DP6, NST3904DXV6, NST3904F3T5G, TIP122, NST3906DXV6, NST3906F3T5G, NST3946DP6, NST3946DXV6, NST45010, NST45011MW6T1G, NST489, NST846BF3T5G
Параметры биполярного транзистора и их взаимосвязь
History: 2SD340 | KRX201E | KRC854F | KT8228A | BF758EA | KRC419V | BC362
🌐 : EN
ES
РУ
Список транзисторов
Обновления
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
2n3773 | b772 transistor | 50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent | d882 transistor





