Биполярный транзистор NST3906DP6 Даташит. Аналоги
Наименование производителя: NST3906DP6
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.42 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-963
Аналог (замена) для NST3906DP6
NST3906DP6 Datasheet (PDF)
nst3906dp6.pdf
NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3906dp6t5g.pdf
NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3906dxv6t1 nst3906dxv6t5.pdf
NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906dxv6t1-5.pdf
NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
Другие транзисторы... NSS60200LT1G , NSS60201LT1G , NSS60600 , NSS60601MZ4 , NST30010MXV6 , NST3904DP6 , NST3904DXV6 , NST3904F3T5G , 2SA1943 , NST3906DXV6 , NST3906F3T5G , NST3946DP6 , NST3946DXV6 , NST45010 , NST45011MW6T1G , NST489 , NST846BF3T5G .
History: UNR511H | KSR2108 | 2N473A | NJL0281D | HEPS0005 | DCX142JH | NSBC114TDXV6T5G
History: UNR511H | KSR2108 | 2N473A | NJL0281D | HEPS0005 | DCX142JH | NSBC114TDXV6T5G
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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