NST857BF3T5G. Аналоги и основные параметры
Наименование производителя: NST857BF3T5G
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 220
Корпус транзистора: SOT-1123
Аналоги (замена) для NST857BF3T5G
- подборⓘ биполярного транзистора по параметрам
NST857BF3T5G даташит
nst857bf3t5g.pdf
NST857BF3T5G PNP General Purpose Transistor The NST857BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http //onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3
nst857bf3.pdf
NST857BF3T5G PNP General Purpose Transistor The NST857BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http //onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3
nst857bdp6t5g.pdf
NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for low-power surface mount application
nst857bdp6.pdf
NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
Другие транзисторы: NST489, NST846BF3T5G, NST847BDP6, NST847BF3T5G, NST847BPDP6T5G, NST848BF3T5G, NST856BF3T5G, NST857BDP6, 2SD1047, NSTB1002, NSTB1005, P2N2222A, PCP1103, PCP1203, PZ3904, PZT651, PZT751
History: 2SC650
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