Биполярный транзистор NST857BF3T5G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NST857BF3T5G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT-1123
Аналоги (замена) для NST857BF3T5G
NST857BF3T5G Datasheet (PDF)
nst857bf3t5g.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857bf3.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857bdp6t5g.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
nst857bdp6.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst857amx2 nst857bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050