Биполярный транзистор UMC5 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: UMC5
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.47
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: SC88A SC70 SOT323
UMC5 Datasheet (PDF)
umc5n.pdf
TransistorsPower management(dual digital transistors)UMC5N / FMC5AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143X chip andDTC144E chip in a UMT or SMTpackage.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN/PNP silicon transistor(Built-in resistor type)FAbsolute maximum ratings (Ta = 25_
umc5n fmc5a c5 sot23-5 sot353.pdf
TransistorsPower management(dual digital transistors)UMC5N / FMC5AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143X chip andDTC144E chip in a UMT or SMTpackage.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN/PNP silicon transistor(Built-in resistor type)FAbsolute maximum ratings (Ta = 25_
umc5n.pdf
UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1)(3) (2)3 2 1 Case Material: Molded Plastic. UL Flamm
umc2nt1g umc3nt1g umc5nt1g.pdf
UMC2NT1G, UMC3NT1G,UMC5NT1GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter re
umc2nt1g nsvumc2nt1g umc3nt1g nsvumc3nt1g umc3nt2g umc5nt1g umc5nt2g nsvumc5nt2g.pdf
UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t
umc2nt1g umc3nt2g umc5nt1g.pdf
UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS