BC846S datasheet, аналоги, основные параметры
Наименование производителя: BC846S 📄📄
Маркировка: 1Ds_4Ft
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 1.5 pf
Статический коэффициент передачи тока (hFE): 110
Корпус транзистора: SOT363
Аналоги (замена) для BC846S
- подборⓘ биполярного транзистора по параметрам
BC846S даташит
bc846s 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification 1999 Sep 01 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose double transistor BC846S FEATURES Two transistors in one package Reduces number of components and board space 6 5 4 handbook, halfpage 6
bc846s.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc846s.pdf
BC 846S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 High current gain 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BC 846S 1Ds Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maxi
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BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified ac
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BC846S/BC846BS Features For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Ot
bc846s.pdf
BC846S Plastic-Encapsulate Multi-Chip (NPN+NPN) Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 Two transistors in one package A Reduces number of components and board space E No mutual interference between the transistors L 6 5 4 MARKING B 4Ft 1 2 3 F C H PACKAGE I
bc846s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC846S DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING 4Ft MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo
bc846s.pdf
SEMICONDUCTOR BC846S BC850S TECHNICAL DATA General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V 3 Machine Model >400 V 2 1 MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage VCEO Vdc BC846 65 BC847, BC850 45 BC848, BC849 30 3 COLLECTOR Collector Base Voltage VCBO Vdc BC846
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BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAX
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 Collector Emitter Voltage VCEO 65 45 30 V 1 C
bc846 bc546 ser.pdf
BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors Rev. 07 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC846 SOT23 - TO-236AB BC856 BC846W SOT323 SC-70 - BC856W BC846T SO
bc846ds.pdf
BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of
bc846t bc847t series 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC846T; BC847T series NPN general purpose transistors Product specification 2000 Nov 15 Supersedes data of 1999 Apr 26 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS
bc846 bc847 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847 NPN general purpose transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS
bc846bpn.pdf
BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA BC846BPN SOT363 SC-88 BC846BS BC856BS 1.2 Fea
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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC846F; BC847F; BC848F series NPN general purpose transistors 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10
bc846w bc847w 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W NPN general purpose transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATI
bc846.pdf
BC846/847/848/849/850 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise BC849, BC850 Complement to BC856 ... BC860 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Coll
bc846bs.pdf
BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA BC846BS SOT363 SC-88 BC856BS BC846BPN 1.2 Fe
bc846bmb.pdf
BC846BMB 65 V, 100 mA NPN general-purpose transistor Rev. 1 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipati
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BC846xW series 65 V, 500 mA NPN general-purpose transistors Rev. 10 27 January 2022 Product data sheet 1. General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC846W SOT323 SC-70 BC856W BC846AW BC856AW BC846BW BC856BW 2. Features
bc846ds.pdf
BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of
bc846bm.pdf
BC846BM 65 V, 100 mA NPN general-purpose transistor 20 August 2015 Product data sheet 1. General description NPN general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface- Mounted Device (SMD) plastic package. PNP complement BC856BM. 2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali
bc846 ser.pdf
BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 9 25 September 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC846 SOT23 - TO-236AB BC856 BC846W SOT323 SC-70 - BC856W BC846T SOT416 SC-
bc846bpn.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc846 bc847 bc848 bc849 bc850.pdf
NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO BC846 80 V BC847/850 50 V BC848/849 30 V Collector E
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NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q6
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NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SO
bc846pn.pdf
BC 846PN NPN/PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 High current gain 6 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 Tape loading orientation PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C BC 846PN 1Os Q6
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BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE
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BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE
bc846aw-bc848cw.pdf
BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary PNP Types BC856W BC858W Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian
bc846as.pdf
BC846AS 65V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 65V Case SOT363 Ultra-Small Surface Mount Package Case Material Molded Plastic, Green Molding Compound. UL Ideally Suited for Automated Insertion Flammability Classification Rating 94V-0 For Switching and AF Amplifier Application Moisture Sensitiv
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BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes
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BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary PNP Types BC856 BC858 Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note
bc846 bc847 bc848 bc849 bc850.pdf
BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR
bc846blp4.pdf
BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(SAT) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Moisture
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BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B E D 0.65 Nomina
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BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available A (BC856W-BC858W) Dim Min Max C A For Switching and AF Amplifier Applications 0.25 0.40 B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case SOT-323, Molded Plastic D 0.65 Nominal B E Case material - UL Flammability Rating
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BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA
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MCC BC846A TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 BC848C Fax (818) 701-4939 Features NPN Power Dissipation 0.225W (Tamb=25 )(Note 1) Collector Current 0.1A Plastic-Encapsulate Case Material Molded Plastic. UL Flammability Transistors Classification Rating 94V-0 and MSL Rati
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MCC BC846AW/BW Micro Commercial Components Micro Commercial Components BC847AW/BW/CW 20736 Marilla Street Chatsworth CA 91311 BC848AW/BW/CW Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Low current (max. 100mA) General Purpose Low voltage (max. 65V) Epo
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M C C TM Micro Commercial Components BC846A thru BC849C Static Characteristic h I FE C 10 3000 COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA 18uA 6 16uA T =25 14uA a 12uA 4 100 10uA 8uA 6uA 2 4uA I B=2uA 0 10 0 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR EMITTER VOLTAGE V CE (V) V I
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
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DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv
bc846alt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
sbc846bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
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General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
nsvbc846bm3t5g.pdf
BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
sbc846bdw1t1g.pdf
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
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BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
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BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
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BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
bc846bm3-d.pdf
BC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V http //onsemi.com This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 65 Vdc 2 Collector-Base Voltage VCBO 80 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collec
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BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise BC850 2 Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8A
bc846bm3.pdf
BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
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BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc
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BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
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Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363/SC-88 S and NSV Prefixes for Automotive and Other Applications CASE 419B STYLE 1 Requiring Unique Si
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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Com
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
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BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
bc846u.pdf
BC846U NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High Voltage VCEO=55V 2 Complementary pair with BC856U Ordering Information SOT-323 Type NO. Marking Package Code AS BC846U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum rat
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BC846 NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=55V 2 Complementary pair with BC856 SOT-23 Ordering Information Type NO. Marking Package Code QA BC846 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum rating
bc846uf.pdf
7 BC846UF Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=55V Complementary pair with BC856UF Ordering Information Type NO. Marking Package Code BC846UF AS SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Conne
bc846f.pdf
BC846F NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=55V Complementary pair with BC856F 2 SOT-23F Ordering Information Type NO. Marking Package Code QA BC846F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ra
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BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (VBE = 0V) VCES 80 50 30 V VCEO Collector Emitt
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BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Base Emitter Collector SOT-323 A L Collector 3 3 MARKING Top View C B
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BC846A, B BC847A, B, C Elektronische Bauelemente BC848A, B, C A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A Dim Min Max L n A 2.800 3.040 General Purpose Transistor NPN Type n 3 B 1.200 1.400 Collect current 0.1A S Top View O O B n C 0.890 1.110 Operating Temp. -55 C +150 C 1 2 n D 0.370 0.500 RoHS compliant product V G G 1.780 2.040 H 0.013
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BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 200mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) under plate - Pb free and RoHS compliant - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halo
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 NPN Formed SMD Package Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G BC847W =1H BC848W =1M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified other
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER SOT-23 3 = COLLECTOR 3 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" 1 2 Marking BC846 =1D BC846A=1A BC846B=1B BC847 =1H BC847A=1E BC847B=1F BC8
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC846W TRANSISTOR (NPN) BC847W SOT-323 BC848W 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W
bc846.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC848 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-
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www.jscj-elec.com AD-BC846/47/48 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC846/47/48 Series Plastic-Encapsulated Transistor AD-BC846/47/48 series Transistor (NPN) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC846-A = 1A; AD-BC846-B = 1B AD-BC847-A = 1E; AD-BC8
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC848 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base V
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SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 High Voltage BC846W VCEO=65V. _ + B 1.25 0.15 _ + C 0.90 0.10 For Complementary With PNP Type BC856W/857W/858W. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.0
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SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Voltage BC846 VCEO=65V. C 1.30 MAX 2 For Complementary With PNP Type BC856/857/858. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 L 0.55
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BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Vo
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BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Voltage V
bc846.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM846A,B GM847A,B,C GM848A,B,C MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Unit GM846A,B GM847A,B,C GM848A,B,C Collector-Emitter Voltage V
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BC846AW,BW BC847AW,BW,CW BC848AW,BW,CW STO-323 Transistor(NPN) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8
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BC846A,B BC847A,B,C BC848A,B,C SOT-23 Transistor(NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848
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BC846BDW Series General Purpose Transistor 2 1 3 6 5 4 NPN Duals 1 2 P b Lead(Pb)-Free 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings BC846 BC847 Rating Symbol BC848 Unit 65 45 Collector-Emitter Voltage V 30 CEO Vdc 80 50 Collector-Base Voltage VCBO 30 Vdc 6.0 Emitter-Base Voltage VEBO 6.0 5.0 Vdc Collector Current-Continuous IC 100 100 100 mAdc Thermal Characteri
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BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 EMITTER SOT-323(SC-70) Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80 V V BC847 CBO 50 BC848 30 Emitter-Base Voltag
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BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level 1 1 2 *ESD Rating - Human Body Model >4000V 2 EMITTER -Machine Model >400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emi
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BC846BPDW Series NPN/PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 NPN+PNP SOT-363(SC-88) MAXIMUM RATINGS - NPN Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current - Continuous IC 100 100 100 mAdc MAXIMUM RATINGS - PNP
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BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCB
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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR(NPN) SOT-23 BC847A,B,C BC848A,B,C 1 BASE 2 EMTTER FEATURES 3 COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS(TA=25 unless other
bc846.pdf
BC846 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage. / Applications General power amplifier and switching application. / Equivalent Circuit
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BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G Dual General Purpose Transistors LBC847BPDW1T1G LBC847CPDW1T1G NPN/PNP Duals (Complimentary) LBC848BPDW1T1G These transistors are designed for general purpose amplifier LBC848CPDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LBC846BLT1G S-LBC846BLT1G General Purpose Transistors NPN Silicon 1. FEATURES SOT23(TO-236) Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V We declare that the material of product compliance with RoHS requirements and Halogen Free. 3 COLLECTOR S- prefix for automotive and other applications requiring unique site
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G These transistors are designed for general purpose amplifier LBC847CDW1T1G LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G LBC846BDW1T1G Dual General Purpose Transistors LBC847BDW1T1G LBC847CDW1T1G NPN Duals LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is S-LBC846ADW1T1G designed for low power surface mount applications. S-LBC846BDW1T1G S-LBC847BDW1T1G We d
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1G NPN Silicon Series Moisture Sensitivity Level 1 S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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SMD Type Transistors NPN Transistors BC846W,BC847W,BC848W (KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC846W 80 Collector - Base Voltage BC847W VCBO 50 BC848W 30 BC846W 65 Collector - Emitter Volt
bc846bpn.pdf
SMD Type Transistors Complementary NPN/PNP Transistors BC846BPN (KC846BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors 6 5 4 TR2 TR1 1 2 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol NPN P
bc846 bc847 bc848.pdf
SMD Type Transistors NPN Transistors BC846 BC848 (KC846 KC848) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Ideally suited for automatic insertion For switching and AF amplifier applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC846 BC847 BC848 Unit C
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf
BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf
BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf
BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . 0.056(1.40) (Ha
bc846bpn.pdf
BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. POWER 225 mWatt VOLTAGE 65 Volt FEATURES General purpose amplifier applications Collector current Ic = 100mA Lead free in
bc846b-g bc847c-g.pdf
Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)
bc846bw-g bc846aw-g.pdf
Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055
bc846c-g bc847b-g.pdf
Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)
bc846a-g.pdf
Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf
Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit
bc846w bc847w bc848w bc849w bc850w.pdf
BC846W-BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage
bc846 bc847 bc848.pdf
BC846 BC848 NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor www.slkormicro.com 1 BC846 BC848 www.slkormicro.com 2 BC846 BC848 www.slkormicro.com 3 BC846 BC848 www.slkormicro.com 4
bc846lt1.pdf
SUNROC BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter V
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R UMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collect
bc846 bc847 bc848.pdf
BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion SOT-23 For switching and AF amplifier applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T a=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Volta
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BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; C B E Symbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846 BC847 50 30
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC847 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) S
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846/847/848/849/850 TRANSISTOR NPN FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. 1.Base 2.Emitter 3.Collector DESCRIPTION SOT-23 Plastic Package NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Symbol Val
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/7/8 TRANSI STOR (NPN) BC846 BC847 BC848 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848 Collector-Emitter Voltage 6
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/BC847/BC848 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC846A=1A BC846B=1B Small Outline Plastic Package BC847A=
bc846 bc847 bc848 bc849 bc850.pdf
BC846-BC850 BC846/847/848/849/850 TRANSISTOR NPN FEATURES SOT-23 Low current (max. 100 mA) Low voltage (max. 65 V). 1 BASE 2 EMITTER APPLICATIONS 3 COLLECTOR General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Sy
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC8 46 THRU BC8 50 TRANSISTOR(NPN) FEATURE Low current (max. 100 mA) SOT-23 Low voltage (max. 65 V). 1 BASE APPLICATIONS 2 EMITTER General purpose switching and amplification. 3 COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/86
bc846bs.pdf
RoHS COMPLIANT BC846BS Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 4Ft Equivalent circuit 1 / 5 S-S2968 Yangzhou
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
RoHS RoHS COMPLIANT COMPLIANT BC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 80 BC84
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf
RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf
RoHS RoHS COMPLIANT COMPLIANT BC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE
bc846.pdf
TRANSISTOR NPN FEATURE SOT-23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 80 VCBO V Collector-Base Voltage BC846 50 BC847 30 BC848 VCEO Collector-Emitter Voltage V BC846 65 BC847 45 BC848 3
bc846w bc850w.pdf
BC846W BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Vol
bc846 bc847 bc848 bc849 bc850.pdf
BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec
bc846dw.pdf
Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (NPN+NPN) FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING 4Ft MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitt
bc846pn.pdf
Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES Epitaxial Die Construction (BC846W+BC856W) Two isolated NPN/PNP Transistors in one package MAKING BB MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6 V IC Collecto
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846 BC847 BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B, BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC846/847/848 MAXIMUM RATINGS Characteristic Symbol Unit (BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage
bc846a bc846b bc846c.pdf
BC846 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC856 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
Plastic-Encapsulate Transistors FEATURES (NPN) BC846A/B For general AF applications (NPN) BC847A/B/C High collector current (NPN) BC848A/B/C High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1. BASE 2. EMITTER SOT-23 1G 1J 1K 1L 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Par
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 A Dim Min Max DEVICE MARKING C A 0.37 0.51 BC846A=1A; BC846B=1B; B C B 1.20 1.40 BC847A=1E; BC847B=1F; BC847C=1G; C 2.30 2.50 TOP VIEW B E BC848A=1J; BC848B=1K BC848C=1L D 0.89 1.03 D E
Другие транзисторы: 2PD601BRL, 2PD601BSL, BC807DS, BC807W, BC817DPN, BC817W, BC846AT, BC846BT, 2SC2240, BC846T, BC846W, BC847BPN, BC847BV, BC847BVN, BC847T, BC847W, BC848W
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