DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC846W; BC847WNPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationNPN general purpose transistors BC846W; BC847WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATI

BC846xW series65 V, 500 mA NPN general-purpose transistorsRev. 10 27 January 2022 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC846W SOT323 SC-70 BC856WBC846AW BC856AWBC846BW BC856BW2. Features

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848WSOT-323NPN Formed SMD PackageMarkingBC846W =1D BC847AW =1EBC846AW =1A BC847BW =1FBC846BW =1B BC847CW =1GBC847W =1H BC848W =1MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified other

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsBC846WTRANSISTOR (NPN) BC847WSOT-323 BC848W 1. BASE2. EMITTERFEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W

SEMICONDUCTOR BC846W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2High Voltage : BC846W VCEO=65V. _+B 1.25 0.15_+C 0.90 0.10For Complementary With PNP Type BC856W/857W/858W.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.0

SMD Type TransistorsNPN TransistorsBC846W,BC847W,BC848W(KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC846W 80 Collector - Base Voltage BC847W VCBO 50BC848W 30BC846W 65 Collector - Emitter Volt

BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Vol

BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications BaseEmitter CollectorSOT-323 A LCollector 33MARKING Top View C B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

BC846/BC546 series65 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SO

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BC846SNPN general purpose double transistorProduct data sheet 1999 Sep 01Supersedes data of 1999 May 28NXP Semiconductors Product data sheetNPN general purpose double transistor BC846SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage6 5 4

BC846DS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-MountedDevice (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC846SNPN general purpose doubletransistorProduct specification 1999 Sep 01Supersedes data of 1999 May 28Philips Semiconductors Product specificationNPN general purpose double transistor BC846SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage6

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BC846T; BC847T seriesNPN general purpose transistorsProduct specification 2000 Nov 15Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationNPN general purpose transistors BC846T; BC847T seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC846; BC847NPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistors BC846; BC847FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

BC846BPN65 V, 100 mA NPN/PNP general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP JEITABC846BPN SOT363 SC-88 BC846BS BC856BS1.2 Fea

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC846F; BC847F; BC848F seriesNPN general purpose transistors1999 May 18Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationNPN general purpose transistors BC846F; BC847F; BC848F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

BC846/847/848/849/8503Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 Complement to BC856 ... BC8602SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage

April 2011BC846 - BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC8502 Complement to BC856 ... BC860SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

BC846BS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 24 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNPcomplement complementNXP JEITABC846BS SOT363 SC-88 BC856BS BC846BPN1.2 Fe

BC846BMB65 V, 100 mA NPN general-purpose transistorRev. 1 15 May 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipati

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC846DS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-MountedDevice (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of

BC846BM65 V, 100 mA NPN general-purpose transistor20 August 2015 Product data sheet1. General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.PNP complement: BC856BM.2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

BC846 series65 V, 100 mA NPN general-purpose transistorsRev. 9 25 September 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SOT416 SC-

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN EPITAXIALBC846/847/848/849/850 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO:BC846 80 V:BC847/850 50 V:BC848/849 30 VCollector E

BC 846SNPN Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package32VPS056041Type Marking Ordering Code Pin Configuration PackageBC 846S 1Ds Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maxi

NPN Silicon AF Transistors BC 846 ... BC 850Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,BC 859, BC 860 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 846 A 1As Q62702-C1772 B E C SOT-23BC 846 B 1Bs Q6

BC 846PNNPN/PNP Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041Tape loading orientationPIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CBC 846PN 1Os Q6

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary PNP Types: BC856W BC858W Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

BC846AS 65V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 65V Case: SOT363 Ultra-Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. UL Ideally Suited for Automated Insertion Flammability Classification Rating 94V-0 For Switching and AF Amplifier Application Moisture Sensitiv

BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

BC846 BC847SOT23 NPN SILICON PLANAR BC848 BC849GENERAL PURPOSE TRANSISTORSBC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 EC 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(SAT) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Moisture

BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B ED 0.65 Nomina

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

BC846PN/UPN_BC847PNNPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BC846PNBC846UPNBC847PNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC846S/ BC846U/ BC847SNPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified ac

BC846S/BC846BSFeatures For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Ot

MCCBC846ATMMicro Commercial Components20736 Marilla Street ChatsworthTHRUMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC848CFax: (818) 701-4939FeaturesNPN Power Dissipation: 0.225W (Tamb=25 )(Note 1) Collector Current: 0.1A Plastic-Encapsulate Case Material: Molded Plastic. UL FlammabilityTransistorsClassification Rating 94V-0 and MSL Rati

MCCBC846AW/BWMicro Commercial ComponentsMicro Commercial ComponentsBC847AW/BW/CW20736 Marilla Street ChatsworthCA 91311BC848AW/BW/CWPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Low current (max. 100mA)General Purpose Low voltage (max. 65V) Epo

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

DATA SHEETwww.onsemi.comDual General PurposeTransistorsSOT-363/SC-88CASE 419BNPN DualsSTYLE 1BC846BDW1, BC847BDW1,(3) (2) (1)BC848CDW1These transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(4) (5) (6)Features S and NSV Prefixes for Automotiv

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 VMachine Model: >400 Vhttp://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 65 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollec

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

Dual General PurposeTransistorsNPN DualsBC846BDW1, BC847BDW1,BC848CDW1www.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.FeaturesSOT-363/SC-88 S and NSV Prefixes for Automotive and Other ApplicationsCASE 419BSTYLE 1Requiring Unique Si

BC846BDW1T1G,BC847BDW1T1G,BC848CDW1T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(4) (5) (6)Com

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC846UNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High Voltage : VCEO=55V 2 Complementary pair with BC856U Ordering Information SOT-323 Type NO. Marking Package Code AS BC846U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum rat

BC846NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=55V 2 Complementary pair with BC856 SOT-23 Ordering Information Type NO. Marking Package Code QA BC846 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum rating

7 BC846UFSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose application Switching application Features High voltage : VCEO=55V Complementary pair with BC856UF Ordering Information Type NO. Marking Package Code BC846UF AS SOT-323F : hFE rank Outline Dimensions unit : mm 1.95~2.25 1.20~1.40 1 3 2 PIN Conne

BC846FNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=55V Complementary pair with BC856F 2 SOT-23F Ordering Information Type NO. Marking Package Code QA BC846F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ra

BC846 BC847 BC848NPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)SOT-23 SMD PackageAbsolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITSDESCRIPTIONVCBOCollector Base Voltage 80 50 30 VCollector Emmitter Voltage (VBE = 0V) VCES80 50 30 VVCEOCollector Emitt

BC846S Plastic-Encapsulate Multi-Chip (NPN+NPN) Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 Two transistors in one package A Reduces number of components and board space E No mutual interference between the transistors L6 5 4MARKING B4Ft 1 2 3FC HPACKAGE I

BC846A, BBC847A, B, CElektronische BauelementeBC848A, B, CA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESADim Min MaxLnA 2.800 3.040General Purpose Transistor NPN Typen3 B 1.200 1.400Collect current : 0.1ASTop ViewO O BnC 0.890 1.110Operating Temp. : -55 C ~ +150 C1 2nD 0.370 0.500RoHS compliant productV GG 1.780 2.040H 0.013

BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848PIN CONFIGURATION (NPN)1 = BASE2 = EMITTERSOT-233 = COLLECTOR3Formed SMD PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"12MarkingBC846 =1DBC846A=1ABC846B=1BBC847 =1HBC847A=1EBC847B=1FBC8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC8481. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsBC846S DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistorsMARKING: 4Ft MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

www.jscj-elec.com AD-BC846/47/48 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC846/47/48 Series Plastic-Encapsulated Transistor AD-BC846/47/48 series Transistor (NPN) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC846-A =1A; AD-BC846-B =1B AD-BC847-A =1E; AD-BC8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC8481. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base V

SEMICONDUCTOR BC846/7/8TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15High Voltage : BC846 VCEO=65V.C 1.30 MAX2For Complementary With PNP Type BC856/857/858. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10L 0.55

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo

BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Voltage V

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM846A,B GM847A,B,C GM848A,B,CMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM846A,B GM847A,B,C GM848A,B,C Collector-Emitter VoltageV

BC846AW,BWBC847AW,BW,CWBC848AW,BW,CW STO-323 Transistor(NPN)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

BC846A,BBC847A,B,CBC848A,B,C SOT-23 Transistor(NPN)1. BASE 2. EMITTER SOT-233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848

BC846BDW SeriesGeneral Purpose Transistor2 13654NPN Duals12P b Lead(Pb)-Free345 6SOT-363(SC-88)NPN+NPNMaximum RatingsBC846 BC847Rating Symbol BC848Unit65 45Collector-Emitter Voltage V 30CEO Vdc80 50Collector-Base Voltage VCBO 30Vdc6.0Emitter-Base Voltage VEBO 6.0 5.0VdcCollector Current-Continuous IC 100 100100 mAdcThermal Characteri

BC846AW/BWBC847AW/BW/CWBC848AW/BW/CWGeneral Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2EMITTERSOT-323(SC-70)Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80VVBC847 CBO 50BC848 30Emitter-Base Voltag

BC846A/B-BC847A/B/CBC848A/B/C-BC849B/CBC850B/CGeneral Purpose TransistorNPN Silicon COLLECTOR3MARKING DIAGRAM33XX = Device11 Code (See2BASE Table Below)SOT-23*Moisture Sensitivity Level: 11 2*ESD Rating - Human Body Model:>4000V 2EMITTER -Machine Model:>400V( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emi

BC846BPDW SeriesNPN/PNP Dual General Purpose Transistors2 13P b Lead(Pb)-Free65412345 6NPN+PNPSOT-363(SC-88)MAXIMUM RATINGS - NPNRating Symbol BC846 BC847 BC848 UnitCollector-Emitter Voltage VCEO 65 45 30 VCollector-Base Voltage VCBO 80 50 30 VEmitter-Base Voltage VEBO 6.0 6.0 5.0 VCollector Current - Continuous IC 100 100 100 mAdcMAXIMUM RATINGS - PNP

BC8 6A/BLT1FM120-M BC8 7A/B/CLT1WILLASTHRUBC8 8A/B/CLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose Transistors SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCB

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR(NPN) SOT-23 BC847A,B,C BC848A,B,C 1BASE 2EMTTER FEATURES 3COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS(TA=25 unless other

BC846 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage. / Applications General power amplifier and switching application. / Equivalent Circuit

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

LESHAN RADIO COMPANY, LTD.LBC846BPDW1T1GDual General Purpose TransistorsLBC847BPDW1T1GLBC847CPDW1T1GNPN/PNP Duals (Complimentary)LBC848BPDW1T1G These transistors are designed for general purpose amplifierLBC848CPDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

LBC846BLT1GS-LBC846BLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT23(TO-236)Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 VWe declare that the material of product compliance with RoHS requirements and Halogen Free.3COLLECTORS- prefix for automotive and other applications requiringunique site

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1G These transistors are designed for general purpose amplifier LBC847CDW1T1GLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements. CWT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GLBC846BDW1T1GDual General Purpose TransistorsLBC847BDW1T1GLBC847CDW1T1GNPN DualsLBC848BDW1T1GLBC848CDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isS-LBC846ADW1T1Gdesigned for low power surface mount applications. S-LBC846BDW1T1GS-LBC847BDW1T1GWe d

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846ALT1GNPN Silicon Series Moisture Sensitivity Level: 1S-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site3and

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

SEMICONDUCTORBC846S ~BC850STECHNICAL DATAGeneral Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 V3 Machine Model: >400 V21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcBC846 65BC847, BC850 45BC848, BC849 303COLLECTORCollectorBase Voltage VCBO VdcBC846

SMD Type TransistorsComplementary NPN/PNP TransistorsBC846BPN (KC846BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors6 5 4TR2TR11 2 3 Absolute Maximum Ratings Ta = 25Parameter Symbol NPN P

SMD Type TransistorsNPN TransistorsBC846~BC848 (KC846~KC848)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Ideally suited for automatic insertion For switching and AF amplifier applications1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC846 BC847 BC848 Unit C

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

BC846BPNDUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purposetransistors. This device is ideal for portable applications where board space is at a premium.POWER 225 mWattVOLTAGE 65 Volt FEATURES General purpose amplifier applications Collector current Ic = 100mA Lead free in

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit

BC846~BC848NPN Silicon Epitaxial Planar TransistorNPN Silicon Epitaxial Planar Transistorwww.slkormicro.com1BC846~BC848www.slkormicro.com2BC846~BC848www.slkormicro.com3BC846~BC848www.slkormicro.com4

SUNROC BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter V

RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect

BC846/BC847/BC848SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion SOT-23 For switching and AF amplifier applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Volta

BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30

BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S

DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6

BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=

BC846-BC850BC846/847/848/849/850 TRANSISTORNPNFEATURESSOT-23 Low current (max. 100 mA) Low voltage (max. 65 V).1BASE 2EMITTER APPLICATIONS3COLLECTOR General purpose switching and amplification.DESCRIPTIONNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Sy

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

RoHS COMPLIANT BC846BSDual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:4Ft Equivalent circuit 1 / 5 S-S2968 Yangzhou

RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J

RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:

TRANSISTORNPN FEATURE SOT-23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 80 VCBO V Collector-Base Voltage BC846 50 BC847 30 BC848 VCEO Collector-Emitter Voltage V BC846 65 BC847 45 BC848 3

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended.1.Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec

Plastic-Encapsulate TransistorsSOT-363 DUAL TRANSISTOR (NPN+NPN) FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING: 4Ft MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitt

Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES Epitaxial Die Construction (BC846W+BC856W) Two isolated NPN/PNP Transistors in one packageMAKING: BB MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6 V IC Collecto

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage

BC846BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC856 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E