BFR93AW - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification 1995 Sep 18 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION 3 handbook, 2 columns High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. Gold metallization

DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor 1995 Sep 18 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION handbook, 2 columns 3 High power gain Silicon NPN transistor encapsulated in a plastic SOT323

BFR 93AW NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 93AW R2s Q62702-F1489 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-em

BFR93AW Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin C

isc Silicon NPN RF Transistor BFR93AW DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line NPN Silicon BFR93ALT1 High-Frequency Transistors Designed primarily for use in high gain, low noise, small signal UHF and microwave amplifiers constructed with thick and thin film circuits using surface mount components. T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line NPN Silicon BFR93ALT1 High Frequency Transistors . . . designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface mount components. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Co

DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION page 3 High power gain NPN wideband transistor in a plastic SOT23 package. Low noise figur

DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification 1997 Oct 29 Supersedes data of September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic lfpage 3 SOT23 package. Low noise figure PNP complement BFT93. Very low inte

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification 2000 Mar 09 Supersedes data of 1999 Nov 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated 3 fpage in a plastic SOT416 (SC-75) package. Gold metallization ensures

BFR 93A NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA CECC.type available CECC 50 002/256 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 93A R2s Q62702-F1086 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit

BFR93A Low Noise Silicon Bipolar RF Transistor For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR93A R2s SOT23 1=B 2=E 3=C Maximum R

isc Silicon NPN RF Transistor BFR93A DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO