Справочник транзисторов. BUJ100

 

Биполярный транзистор BUJ100 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUJ100
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 14
   Корпус транзистора: TO92

 Аналоги (замена) для BUJ100

 

 

BUJ100 Datasheet (PDF)

 ..1. Size:64K  philips
buj100.pdf

BUJ100 BUJ100

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVC

 ..2. Size:393K  cn ween semi
buj100.pdf

BUJ100 BUJ100

DISCRETE SEMICONDUCTORSDATA SHEETBUJ100Silicon Diffused Power TransistorProduct specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lig

 0.1. Size:71K  philips
buj100at 1.pdf

BUJ100 BUJ100

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended foruse in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters andinverters.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

 0.2. Size:147K  nxp
buj100lr.pdf

BUJ100 BUJ100

BUJ100LRNPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 0.3. Size:264K  cn ween semi
buj100lr.pdf

BUJ100 BUJ100

BUJ100LRNPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic lig

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