Биполярный транзистор BUJ103AD - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJ103AD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 12.5
Корпус транзистора: DPAK
BUJ103AD Datasheet (PDF)
buj103ad.pdf
BUJ103ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Mot
buj103ad.pdf
BUJ103ADSilicon diffused power transistorRev. 3 18 October 2016 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC
buj103ax.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla
buj103a.pdf
BUJ103ASilicon diffused power transistorRev. 03 3 March 2005 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control
buj103au.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAM
buj103a hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application
buj103ax.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorProduct specification August 2018WeEn Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast a
buj103a.pdf
BUJ103ASilicon diffused power transistorRev.05 - 29 March 2018 Product data sheet1. General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Low thermal resistance Fast switching3. Applications Inverters Motor control systems Electronic lighting ballasts
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