BUJ303AD datasheet, аналоги, основные параметры

Наименование производителя: BUJ303AD  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1000 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 22

Корпус транзистора: DPAK

 Аналоги (замена) для BUJ303AD

- подборⓘ биполярного транзистора по параметрам

 

BUJ303AD даташит

 ..1. Size:189K  nxp
 buj303ad.pdf pdf_icon

BUJ303AD

BUJ303AD NPN power transistor Rev. 1 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct

 7.1. Size:579K  philips
 buj303a.pdf pdf_icon

BUJ303AD

BUJ303A NPN power transistor Rev. 05 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses 1.3 Applications

 7.2. Size:59K  philips
 buj303ax 3.pdf pdf_icon

BUJ303AD

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

 7.3. Size:55K  philips
 buj303a 3.pdf pdf_icon

BUJ303AD

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BC558, BUJ303AX, BUJ303B, BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD