Биполярный транзистор BUJ303AD - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJ303AD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1000 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 22
Корпус транзистора: DPAK
BUJ303AD Datasheet (PDF)
buj303ad.pdf
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BUJ303ADNPN power transistorRev. 1 2 September 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct
buj303a.pdf
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BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications
buj303ax 3.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
buj303a 3.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
buj303ax.pdf
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BUJ303AXNPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT186A(TO220F) "full pack" plastic package.2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC
buj303a.pdf
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BUJ303ANPN power transistor12 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC convert
buj303a.pdf
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isc Silicon NPN Power Transistor BUJ303ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lighting ballastapplications, converters, inverters, switching regulators,motor control systems, etc.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
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