Биполярный транзистор BUJ303AX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJ303AX
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 32 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1000 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 22
Корпус транзистора: TO220F
BUJ303AX Datasheet (PDF)
buj303ax 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
buj303ax.pdf
BUJ303AXNPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT186A(TO220F) "full pack" plastic package.2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC
buj303a.pdf
BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications
buj303a 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
buj303ad.pdf
BUJ303ADNPN power transistorRev. 1 2 September 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct
buj303a.pdf
BUJ303ANPN power transistor12 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC convert
buj303a.pdf
isc Silicon NPN Power Transistor BUJ303ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lighting ballastapplications, converters, inverters, switching regulators,motor control systems, etc.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
