Справочник транзисторов. BUJ303AX

 

Биполярный транзистор BUJ303AX Даташит. Аналоги


   Наименование производителя: BUJ303AX
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 32 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1000 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 22
   Корпус транзистора: TO220F
 

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BUJ303AX Datasheet (PDF)

 ..1. Size:59K  philips
buj303ax 3.pdfpdf_icon

BUJ303AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

 ..2. Size:1197K  cn ween semi
buj303ax.pdfpdf_icon

BUJ303AX

BUJ303AXNPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT186A(TO220F) "full pack" plastic package.2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC

 7.1. Size:579K  philips
buj303a.pdfpdf_icon

BUJ303AX

BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications

 7.2. Size:55K  philips
buj303a 3.pdfpdf_icon

BUJ303AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET

Другие транзисторы... BUJ105AB , BUJ105AD , BUJ106A , BUJ302A , BUJ302AD , BUJ302AX , BUJ303A , BUJ303AD , 2SD2499 , BUJ303B , BUJ303CD , BUJ403A , BUJD103AD , BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX .

 

 
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