BUJ303AX datasheet, аналоги, основные параметры

Наименование производителя: BUJ303AX  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 32 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1000 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 22

Корпус транзистора: TO220F

 Аналоги (замена) для BUJ303AX

- подборⓘ биполярного транзистора по параметрам

 

BUJ303AX даташит

 ..1. Size:59K  philips
buj303ax 3.pdfpdf_icon

BUJ303AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

 ..2. Size:1197K  cn ween semi
buj303ax.pdfpdf_icon

BUJ303AX

BUJ303AX NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F) "full pack" plastic package. 2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC

 7.1. Size:579K  philips
buj303a.pdfpdf_icon

BUJ303AX

BUJ303A NPN power transistor Rev. 05 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses 1.3 Applications

 7.2. Size:55K  philips
buj303a 3.pdfpdf_icon

BUJ303AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET

Другие транзисторы: BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BUJ303AD, TIP31, BUJ303B, BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX