Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

DISCRETE SEMICONDUCTORSDATA SHEETBUJ403ASilicon Diffused Power TransistorProduct specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUJ403A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Co

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM