BUJ403A datasheet, аналоги, основные параметры

Наименование производителя: BUJ403A  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1200 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 15.5

Корпус транзистора: TO220AB

 Аналоги (замена) для BUJ403A

- подборⓘ биполярного транзистора по параметрам

 

BUJ403A даташит

 ..1. Size:53K  philips
 buj403a.pdf pdf_icon

BUJ403A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

 ..2. Size:332K  cn ween semi
 buj403a.pdf pdf_icon

BUJ403A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification October 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications

 ..3. Size:136K  inchange semiconductor
 buj403a.pdf pdf_icon

BUJ403A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUJ403A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Co

 0.1. Size:56K  philips
 buj403ax 4.pdf pdf_icon

BUJ403A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

ПОКАЗАТЬ ЕЩЁ

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