Биполярный транзистор PBLS2001D - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBLS2001D
Маркировка: F6
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SC74
Аналоги (замена) для PBLS2001D
PBLS2001D Datasheet (PDF)
pbls2001d.pdf
PBLS2001D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
pbls2001s.pdf
PBLS2001S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
pbls2004d.pdf
PBLS2004D20 V PNP BISS loadswitchRev. 01 23 June 2005 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low th
pbls2003d.pdf
PBLS2003D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
pbls2003s.pdf
PBLS2003S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
pbls2002s.pdf
PBLS2002S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
pbls2002d.pdf
PBLS2002D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
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