DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4480X80 V, 4 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Oct 25Supersedes data of 2004 Aug 5NXP Semiconductors Product data sheet80 V, 4 A PBSS4480XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4440D40 V NPN low VCEsat (BISS) transistorRev. 01 21 April 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)SMD plastic package.PNP complement: PBSS5440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC)

PBSS4420D20 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect

PBSS4032SPN30 V NPN/PNP low VCEsat (BISS) transistorRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS4540ZNPN medium power transistorPreliminary specification 1999 Aug 04Philips Semiconductors Preliminary specificationNPN medium power transistor PBSS4540ZFEATURES PINNING High current (max. 10 A)PIN DESCRIPTION Low voltage (max. 40 V)1 base Low VCEsat.2 collector3 emitterAPPLICATIONS4 coll

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D302PBSS4350D50 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5330PA.1.2 Features and benefits

PBSS4032PD30 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032ND.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet40 V, 5 A PBSS4540XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4520X20 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet20 V, 5 A PBSS4520XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4250X50 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS4250XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

PBSS4612PA12 V, 6 A NPN low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5612PA.1.2 Features and benefits

PBSS4160DS60 V, 1 A NPN/NPN low VCEsat (BISS) transistorRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.PNP/PNP complement: PBSS5160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High

PBSS4620PA20 V, 6 A NPN low VCEsat (BISS) transistorRev. 01 18 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5620PA.1.2 Features and benefits

PBSS4032PT30 V, 2.4 A PNP low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4350X50 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Nov 04Supersedes data of 2003 Nov 21Philips Semiconductors Product specification50 V, 3 APBSS4350XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

PBSS4021NT20 V, 4.3 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

PBSS4021SP20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

PBSS4041SPN60 V NPN/PNP low VCEsat (BISS) transistorRev. 2 20 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

PBSS4032PZ30 V, 4.4 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4140T40 V, 1A NPN low VCEsat (BISS) transistorProduct data sheet 2005 Feb 24Supersedes data of 2005 Feb 14NXP Semiconductors Product data sheet40 V, 1A PBSS4140TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4120T20 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet20 V, 1 A PBSS4120TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

PBSS4041NT60 V, 3.8 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4240DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2003 Feb 20NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4240DPNFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatMAX. High collector current capability IC and ICMSYMBOL PARAMETER UNIT

PBSS4041SP60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati

DISCRETE SEMICONDUCTORSDATA SHEETM3D088PBSS4130T30 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Nov 27Philips Semiconductors Product specification30 V, 1 APBSS4130TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and I

PBSS4032ND30 V, 3.5 A NPN low VCEsat (BISS) transistorRev. 01 30 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PD.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

PBSS4032NT30 V, 2.6 A NPN low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

PBSS4032SN30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability

PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

PBSS4041SN60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

PBSS4021SN20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102PBSS4140U40 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

PBSS4021SPN20 V NPN/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4240T40 V; 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet40 V; 2 A NPN low VCEsat PBSS4240T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO

PBSS4021PT20 V, 3.5 A PNP low VCEsat (BISS) transistorRev. 01 29 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

PBSS4580PA80 V, 5.6 A NPN low VCEsat (BISS) transistorRev. 01 15 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5580PA.1.2 Features and benefi

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturati

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS4540Z40 V low VCEsat NPN transistorProduct data sheet 2001 Nov 14Supersedes data of 2001 Jul 24NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilitiesVCEO emitter-colle

PBSS4560PA60 V, 6 A NPN low VCEsat (BISS) transistorRev. 1 19 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5560PA.1.2 Features and benefits

PBSS4630PA30 V, 6 A NPN low VCEsat (BISS) transistorRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5630PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4320T20 V NPN low VCEsat transistorProduct data sheet 2004 Mar 18Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet20 V NPN low VCEsat transistorPBSS4320TFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsatVCEO collector-emitter v

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS4160T60 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 May 12Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet60 V, 1 A PBSS4160TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

PBSS4032SP30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4230T30 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet30 V, 2 A PBSS4230TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationNPN transistor PBSS4350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT

PBSS4160DPN60 V, 1 A NPN/PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

PBSS4041PT60 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 02 9 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NT.1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4350T50 V; 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet50 V; 3 A NPN low VCEsat PBSS4350T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEs

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt

PBSS4032SPN30 V NPN/PNP low VCEsat (BISS) transistorRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.PNP complement: PBSS5330PA.2. Features and benefits Low collector-emitter saturatio

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistor15 April 2020 Product data sheet1. General descriptionNPN low VCEsat transistor in a medium power SOT89 (SC-62) package.PNP complement: PBSS5540X.2. Features and benefits High hFE and low VCEsat at high current operation High collector current capability: IC maximum 4 A High efficiency leading to less heat generation.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistor9 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation voltage

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4160QA60 V, 1 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5160QA.2. Features and benefits Very low collector-emitter

PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4021SP20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

PBSS4041SPN60 V NPN/PNP low VCEsat (BISS) transistorRev. 2 20 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

PBSS4230PAN30 V, 2 A NPN/NPN low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

PBSS4160U60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.PNP complement: PBSS5160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c

PBSS4032PZ30 V, 4.4 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

PBSS4260QA60 V, 2 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5260QA.2. Features and benefits Very low collector-emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5130QA.2. Features and benefits Very low collector-emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS4140V40 V low VCEsat NPN transistorProduct specification 2002 Jun 20Supersedes data of 2001 Nov 05Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thinVCEO

DISCRETE SEMICONDUCTORSDATA SHEETageMBD128PBSS4240Y40 V low VCEsat NPN transistorProduct specification 2001 Jul 13Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage 40 V Impr

PBSS4160V60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionLow VCEsat (BISS) NPN transistor in a SOT666 plastic package.PNP complement: PBSS5160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4240X40 V, 2 A NPN low VCEsat (BISS) transistor15 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:PBSS5240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

PBSS4041SP60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 2 8 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation High

PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati

PBSS4230PANP30 V, 2 A NPN/PNP low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4160PANS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.2.

PBSS4160PANP60 V, 1 A NPN/PNP low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

PBSS4130PANP30 V, 1 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collect

PBSS4350SPN50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistorRev. 01 5 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP NamePBSS4350

PBSS4112PAN120 V, 1 A NPN/NPN low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4160PANPS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.2.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS4240V40 V low VCEsat NPN transistorProduct data sheet 2003 Jan 30NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4240VFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVCEO collector-emitter voltage

PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

PBSS4230QA30 V, 2 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5230QA.2. Features and benefits Very low collector-emitter

PBSS4360X60 V, 3 A NPN low VCEsat BISS transistor9 June 2017 Product data sheet1. General descriptionNPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5360X2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capab

PBSS4260PAN60 V, 2 A NPN/NPN low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

PBSS4260PANS60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5260PAPS2. Features and benefits

PBSS4220V20 V, 2 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.PNP complement: PBSS5220V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit

PBSS4032SN30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability

PBSS4240Z40 V, 2 A NPN low VCEsat (BISS) transistor16 October 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

PBSS4112PANP120 V, 1 A NPN/PNP low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit

PBSS4350SS50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementNXP NamePBSS4350S

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4320X20 V, 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Dec 15NXP Semiconductors Product data sheet20 V, 3 A PBSS4320XNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURES SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sa

PBSS4041SN60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

PBSS4021SN20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistorRev. 2 11 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4021SPN20 V NPN/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4260PANP60 V, 2 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4330X30 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Dec 06Supersedes data of 2003 Nov 28Philips Semiconductors Product specification30 V, 3 APBSS4330XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4360Z60 V, 3 A NPN low VCEsat (BISS) transistor26 February 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5360Z.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.PNP complement: PBSS5330PAS2. F

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistor10 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturation volt

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4220PANS20 V, 2 A NPN/NPN low VCEsat BISS double transistor14 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5220PAPS2. Features and benefits

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4032SP30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati

PBSS4130PAN30 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collecto

PBSS4160PAN60 V, 1 A NPN/NPN low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt

PBSS4160X60 V, 1 A NPN low VCEsat BISS transistor23 May 2017 Product data sheet1. General descriptionNPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)flat lead Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High

PBSS4140S(BR3DG4140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching. / Applications

SMD Type TransistorsNPN TransistorsPBSS4350T (KBSS4350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation.1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9 -0.13 corresponding low RC