PBSS4480X datasheet и подбор замены

 ..1. Size:200K  philips
 pbss4480x.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Oct 25 Supersedes data of 2004 Aug 5 NXP Semiconductors Product data sheet 80 V, 4 A PBSS4480X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operation SYMBOL PARAMETER MAX. UNIT

 ..2. Size:444K  nxp
 pbss4480x.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:125K  nxp
 pbss4440d.pdf 

PBSS4440D 40 V NPN low VCEsat (BISS) transistor Rev. 01 21 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement PBSS5440D. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC)

 8.2. Size:116K  nxp
 pbss4420d.pdf 

PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5420D. 1.2 Features Very low collector-emitter saturation resistance Ultra low collect

 9.1. Size:493K  philips
 pbss4032spn.pdf 

PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.2. Size:49K  philips
 pbss4540z 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z FEATURES PINNING High current (max. 10 A) PIN DESCRIPTION Low voltage (max. 40 V) 1 base Low VCEsat. 2 collector 3 emitter APPLICATIONS 4 coll

 9.3. Size:290K  philips
 pbss4350d.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emit

 9.4. Size:156K  philips
 pbss4330pa.pdf 

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 1.2 Features and benefits

 9.5. Size:182K  philips
 pbss4032pd.pdf 

PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032ND. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 9.6. Size:199K  philips
 pbss4540x.pdf 

 9.7. Size:199K  philips
 pbss4520x.pdf 

 9.8. Size:196K  philips
 pbss4021nx.pdf 

PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PX. 1.2 Features and benefits Very low collector-emitter saturation

 9.9. Size:146K  philips
 pbss4250x.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Nov 08 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS4250X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

 9.10. Size:181K  philips
 pbss4041pz.pdf 

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 9.11. Size:167K  philips
 pbss4612pa.pdf 

PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5612PA. 1.2 Features and benefits

 9.12. Size:207K  philips
 pbss4160ds.pdf 

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High

 9.13. Size:167K  philips
 pbss4620pa.pdf 

PBSS4620PA 20 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5620PA. 1.2 Features and benefits

 9.14. Size:172K  philips
 pbss4032pt.pdf 

PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

 9.15. Size:127K  philips
 pbss4350x.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Nov 04 Supersedes data of 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PBSS4350X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

 9.16. Size:187K  philips
 pbss4021pz.pdf 

PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 9.17. Size:176K  philips
 pbss4021nt.pdf 

PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 9.18. Size:375K  philips
 pbss4021sp.pdf 

PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.19. Size:508K  philips
 pbss4041spn.pdf 

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.20. Size:190K  philips
 pbss4032pz.pdf 

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 9.21. Size:258K  philips
 pbss4140t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet 2005 Feb 24 Supersedes data of 2005 Feb 14 NXP Semiconductors Product data sheet 40 V, 1A PBSS4140T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capabilities. VCEO

 9.22. Size:244K  philips
 pbss4120t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS4120T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC

 9.23. Size:180K  philips
 pbss4041nt.pdf 

PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 9.24. Size:435K  philips
 pbss4240dpn.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT

 9.25. Size:372K  philips
 pbss4041sp.pdf 

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.26. Size:175K  philips
 pbss4041nz.pdf 

PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

 9.27. Size:195K  philips
 pbss4021px.pdf 

PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NX. 1.2 Features and benefits Very low collector-emitter saturati

 9.28. Size:49K  philips
 pbss4130t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27 Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I

 9.29. Size:150K  philips
 pbss4032nd.pdf 

PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 9.30. Size:182K  philips
 pbss4032nt.pdf 

PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

 9.31. Size:196K  philips
 pbss4032nz.pdf 

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 9.32. Size:368K  philips
 pbss4032sn.pdf 

PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.33. Size:188K  philips
 pbss4032px.pdf 

PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturati

 9.34. Size:155K  philips
 pbss4350z.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

 9.35. Size:190K  philips
 pbss4021nz.pdf 

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

 9.36. Size:369K  philips
 pbss4041sn.pdf 

PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.37. Size:166K  philips
 pbss4021sn.pdf 

PBSS4021SN 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.38. Size:259K  philips
 pbss4140u.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PBSS4140U 40 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capabilities. VCEO

 9.39. Size:214K  philips
 pbss4021spn.pdf 

PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.40. Size:246K  philips
 pbss4240t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO

 9.41. Size:176K  philips
 pbss4021pt.pdf 

PBSS4021PT 20 V, 3.5 A PNP low VCEsat (BISS) transistor Rev. 01 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 9.42. Size:168K  philips
 pbss4580pa.pdf 

PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev. 01 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5580PA. 1.2 Features and benefi

 9.43. Size:194K  philips
 pbss4041nx.pdf 

PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PX. 1.2 Features and benefits Very low collector-emitter saturati

 9.44. Size:146K  philips
 pbss4540z.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS4540Z 40 V low VCEsat NPN transistor Product data sheet 2001 Nov 14 Supersedes data of 2001 Jul 24 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capabilities VCEO emitter-colle

 9.45. Size:168K  philips
 pbss4560pa.pdf 

PBSS4560PA 60 V, 6 A NPN low VCEsat (BISS) transistor Rev. 1 19 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5560PA. 1.2 Features and benefits

 9.46. Size:167K  philips
 pbss4630pa.pdf 

PBSS4630PA 30 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5630PA. 1.2 Features and benefits

 9.47. Size:338K  philips
 pbss4320t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet 2004 Mar 18 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsat VCEO collector-emitter v

 9.48. Size:341K  philips
 pbss4160t.pdf 

 9.49. Size:164K  philips
 pbss4032sp.pdf 

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.50. Size:251K  philips
 pbss4230t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC

 9.51. Size:76K  philips
 pbss4350d 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D FEATURES PINNING High current capabilities PIN DESCRIPTION Low VCEsat. 1 collector 2 collector APPLICATIONS 3 base Heavy duty battery powered equipment (Automotive, 4 emitter T

 9.52. Size:258K  philips
 pbss4160dpn.pdf 

PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC

 9.53. Size:192K  philips
 pbss4041px.pdf 

PBSS4041PX 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NX. 1.2 Features and benefits Very low collector-emitter saturation

 9.54. Size:182K  philips
 pbss4041pt.pdf 

PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NT. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

 9.55. Size:338K  philips
 pbss4350t.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat PBSS4350T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEs

 9.56. Size:191K  philips
 pbss4032nx.pdf 

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PX. 1.2 Features and benefits Very low collector-emitter saturati

 9.57. Size:342K  philips
 pbss4140dpn.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN FEATURES QUICK REFERENCE DATA 600 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEO collector-emitt

 9.58. Size:494K  nxp
 pbss4032spn.pdf 

PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.59. Size:498K  nxp
 pbss4350d.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.60. Size:702K  nxp
 pbss4330pa.pdf 

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 2. Features and benefits Low collector-emitter saturatio

 9.61. Size:299K  nxp
 pbss4032pd.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.62. Size:237K  nxp
 pbss4540x.pdf 

PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor 15 April 2020 Product data sheet 1. General description NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement PBSS5540X. 2. Features and benefits High hFE and low VCEsat at high current operation High collector current capability IC maximum 4 A High efficiency leading to less heat generation.

 9.63. Size:438K  nxp
 pbss4520x.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.64. Size:249K  nxp
 pbss4021nx.pdf 

PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 9 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PX. 1.2 Features and benefits Very low collector-emitter saturation voltage

 9.65. Size:195K  nxp
 pbss4250x.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.66. Size:181K  nxp
 pbss4041pz.pdf 

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 9.67. Size:284K  nxp
 pbss4612pa.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.68. Size:324K  nxp
 pbss4160ds.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.69. Size:284K  nxp
 pbss4620pa.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.70. Size:289K  nxp
 pbss4032pt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.71. Size:241K  nxp
 pbss4350x.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.72. Size:258K  nxp
 pbss4160qa.pdf 

PBSS4160QA 60 V, 1 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5160QA. 2. Features and benefits Very low collector-emitter

 9.73. Size:188K  nxp
 pbss4021pz.pdf 

PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 9.74. Size:293K  nxp
 pbss4021nt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.75. Size:375K  nxp
 pbss4021sp.pdf 

PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.76. Size:508K  nxp
 pbss4041spn.pdf 

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.77. Size:247K  nxp
 pbss4230pan.pdf 

PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect

 9.78. Size:192K  nxp
 pbss4160u.pdf 

PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement PBSS5160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c

 9.79. Size:191K  nxp
 pbss4032pz.pdf 

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 9.80. Size:244K  nxp
 pbss4260qa.pdf 

PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5260QA. 2. Features and benefits Very low collector-emitter

 9.81. Size:470K  nxp
 pbss4140t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.82. Size:257K  nxp
 pbss4130qa.pdf 

PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5130QA. 2. Features and benefits Very low collector-emitter

 9.83. Size:455K  nxp
 pbss4120t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.84. Size:57K  nxp
 pbss4140v.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification 2002 Jun 20 Supersedes data of 2001 Nov 05 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin VCEO

 9.85. Size:55K  nxp
 pbss4240y.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr

 9.86. Size:149K  nxp
 pbss4160v.pdf 

PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement PBSS5160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re

 9.87. Size:699K  nxp
 pbss4240dpn.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.88. Size:183K  nxp
 pbss4240x.pdf 

PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

 9.89. Size:373K  nxp
 pbss4041sp.pdf 

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.90. Size:201K  nxp
 pbss4041nz.pdf 

PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation High

 9.91. Size:195K  nxp
 pbss4021px.pdf 

PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NX. 1.2 Features and benefits Very low collector-emitter saturati

 9.92. Size:338K  nxp
 pbss4230panp.pdf 

PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4230PAN. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect

 9.93. Size:165K  nxp
 pbss4130t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.94. Size:280K  nxp
 pbss4160pans.pdf 

PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.

 9.95. Size:359K  nxp
 pbss4160panp.pdf 

PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto

 9.96. Size:337K  nxp
 pbss4130panp.pdf 

PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4130PAN. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collect

 9.97. Size:122K  nxp
 pbss4350spn.pdf 

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS4350

 9.98. Size:247K  nxp
 pbss4112pan.pdf 

PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4112PANP. PNP/PNP complement PBSS5112PAP. 1.2 Features and benefit

 9.99. Size:267K  nxp
 pbss4032nd.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.100. Size:327K  nxp
 pbss4160panps.pdf 

PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.

 9.101. Size:299K  nxp
 pbss4032nt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.102. Size:86K  nxp
 pbss4240v.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VCEO collector-emitter voltage

 9.103. Size:196K  nxp
 pbss4032nz.pdf 

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 9.104. Size:244K  nxp
 pbss4230qa.pdf 

PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5230QA. 2. Features and benefits Very low collector-emitter

 9.105. Size:248K  nxp
 pbss4360x.pdf 

PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 9 June 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5360X 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capab

 9.106. Size:249K  nxp
 pbss4260pan.pdf 

PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

 9.107. Size:734K  nxp
 pbss4260pans.pdf 

PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5260PAPS 2. Features and benefits

 9.108. Size:165K  nxp
 pbss4220v.pdf 

PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement PBSS5220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit

 9.109. Size:368K  nxp
 pbss4032sn.pdf 

PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.110. Size:188K  nxp
 pbss4032px.pdf 

PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturati

 9.111. Size:155K  nxp
 pbss4350z.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

 9.112. Size:208K  nxp
 pbss4240z.pdf 

PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

 9.113. Size:190K  nxp
 pbss4021nz.pdf 

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

 9.114. Size:336K  nxp
 pbss4112panp.pdf 

PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4112PAN. PNP/PNP complement PBSS5112PAP. 1.2 Features and benefit

 9.115. Size:89K  nxp
 pbss4350ss.pdf 

PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP Name PBSS4350S

 9.116. Size:124K  nxp
 pbss4320x.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Dec 15 NXP Semiconductors Product data sheet 20 V, 3 A PBSS4320X NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sa

 9.117. Size:370K  nxp
 pbss4041sn.pdf 

PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.118. Size:166K  nxp
 pbss4021sn.pdf 

PBSS4021SN 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name

 9.119. Size:377K  nxp
 pbss4360pas.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.120. Size:466K  nxp
 pbss4140u.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.121. Size:214K  nxp
 pbss4021spn.pdf 

PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 9.122. Size:461K  nxp
 pbss4240t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.123. Size:340K  nxp
 pbss4260panp.pdf 

PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4260PAN. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

 9.124. Size:101K  nxp
 pbss4330x.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Dec 06 Supersedes data of 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A PBSS4330X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

 9.125. Size:293K  nxp
 pbss4021pt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.126. Size:256K  nxp
 pbss4360z.pdf 

PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5360Z. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa

 9.127. Size:285K  nxp
 pbss4580pa.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.128. Size:246K  nxp
 pbss4330pas.pdf 

PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement PBSS5330PAS 2. F

 9.129. Size:247K  nxp
 pbss4041nx.pdf 

PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor 10 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PX. 1.2 Features and benefits Very low collector-emitter saturation volt

 9.130. Size:354K  nxp
 pbss4540z.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.131. Size:285K  nxp
 pbss4560pa.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.132. Size:284K  nxp
 pbss4630pa.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.133. Size:575K  nxp
 pbss4320t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.134. Size:724K  nxp
 pbss4220pans.pdf 

PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor 14 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5220PAPS 2. Features and benefits

 9.135. Size:567K  nxp
 pbss4160t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.136. Size:165K  nxp
 pbss4032sp.pdf 

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 9.137. Size:467K  nxp
 pbss4230t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.138. Size:375K  nxp
 pbss4160dpn.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.139. Size:193K  nxp
 pbss4041px.pdf 

PBSS4041PX 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NX. 1.2 Features and benefits Very low collector-emitter saturation

 9.140. Size:573K  nxp
 pbss4350t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.141. Size:191K  nxp
 pbss4032nx.pdf 

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PX. 1.2 Features and benefits Very low collector-emitter saturati

 9.142. Size:268K  nxp
 pbss4130pan.pdf 

PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collecto

 9.143. Size:268K  nxp
 pbss4160pan.pdf 

PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto

 9.144. Size:342K  nxp
 pbss4140dpn.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN FEATURES QUICK REFERENCE DATA 600 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEO collector-emitt

 9.145. Size:215K  nxp
 pbss4160x.pdf 

PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High

 9.146. Size:442K  blue-rocket-elect
 pbss4140s.pdf 

PBSS4140S(BR3DG4140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching. / Applications

 9.147. Size:1663K  kexin
 pbss4350t.pdf 

SMD Type Transistors NPN Transistors PBSS4350T (KBSS4350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9 -0.1 3 corresponding low RC