Справочник транзисторов. PBSS5120T

 

Биполярный транзистор PBSS5120T - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PBSS5120T
   Маркировка: *3K
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 28 pf
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: SOT23

 Аналоги (замена) для PBSS5120T

 

 

PBSS5120T Datasheet (PDF)

 ..1. Size:119K  philips
pbss5120t.pdf

PBSS5120T
PBSS5120T

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS5120T20 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet20 V, 1 A PBSS5120TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

 ..2. Size:319K  nxp
pbss5120t.pdf

PBSS5120T
PBSS5120T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:249K  philips
pbss5140v.pdf

PBSS5120T
PBSS5120T

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

 8.2. Size:141K  philips
pbss5160ds.pdf

PBSS5120T
PBSS5120T

PBSS5160DS60 V, 1 A PNP/PNP low VCEsat (BISS) transistorRev. 03 9 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High c

 8.3. Size:119K  philips
pbss5130t.pdf

PBSS5120T
PBSS5120T

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS5130T30 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 12NXP Semiconductors Product data sheet30 V, 1 A PBSS5130TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 8.4. Size:99K  philips
pbss5140t.pdf

PBSS5120T
PBSS5120T

PBSS5140T40 V, 1 A PNP low VCEsat BISS transistorRev. 04 29 July 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 8.5. Size:55K  philips
pbss5140t 1.pdf

PBSS5120T
PBSS5120T

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS5140TPNP BISS transistorProduct specification 2000 Nov 16Philips Semiconductors Product specificationPNP BISS transistor PBSS5140TFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low collector-emitter saturation voltage ensures1 basereduced power consumption.2 emitter3 collectorAPPLICATIONS

 8.6. Size:284K  philips
pbss5160t n.pdf

PBSS5120T
PBSS5120T

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 18 July 2008 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assh

 8.7. Size:270K  philips
pbss5140u.pdf

PBSS5120T
PBSS5120T

DISCRETE SEMICONDUCTORS DATA SHEETageM3D102PBSS5140U40 V low VCEsat PNP transistorProduct data sheet 2001 Jul 20Supersedes data of 2001 Mar 27NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitte

 8.8. Size:127K  philips
pbss5160u.pdf

PBSS5120T
PBSS5120T

PBSS5160U60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 2 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very smallSOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 8.9. Size:245K  nxp
pbss5130pap.pdf

PBSS5120T
PBSS5120T

PBSS5130PAP30 V, 1 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.2. Features and benefits Very low collect

 8.10. Size:256K  nxp
pbss5160qa.pdf

PBSS5120T
PBSS5120T

PBSS5160QA60 V, 1 A PNP low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4160QA.2. Features and benefits Very low collector-emitter

 8.11. Size:246K  nxp
pbss5112pap.pdf

PBSS5120T
PBSS5120T

PBSS5112PAP120 V, 1 A PNP/PNP low VCEsat (BISS) transistor30 November 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.1.2 Features and benefit

 8.12. Size:258K  nxp
pbss5160ds.pdf

PBSS5120T
PBSS5120T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.13. Size:268K  nxp
pbss5160pap.pdf

PBSS5120T
PBSS5120T

PBSS5160PAP60 V, 1 A PNP/PNP low VCEsat (BISS) transistor23 January 2013 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.2. Features and benefits Very low collecto

 8.14. Size:314K  nxp
pbss5130t.pdf

PBSS5120T
PBSS5120T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.15. Size:216K  nxp
pbss5140t.pdf

PBSS5120T
PBSS5120T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.16. Size:236K  nxp
pbss5130qa.pdf

PBSS5120T
PBSS5120T

PBSS5130QA30 V, 1 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4130QA.2. Features and benefits Very low collector-emitter

 8.17. Size:691K  nxp
pbss5160t.pdf

PBSS5120T
PBSS5120T

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 15 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 8.18. Size:477K  nxp
pbss5140u.pdf

PBSS5120T
PBSS5120T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.19. Size:136K  nxp
pbss5160v.pdf

PBSS5120T
PBSS5120T

PBSS5160V60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie

 8.20. Size:280K  nxp
pbss5160paps.pdf

PBSS5120T
PBSS5120T

PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor24 November 2014 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter saturation volt

 8.21. Size:360K  blue-rocket-elect
pbss5140s.pdf

PBSS5120T
PBSS5120T

PBSS5140S(BR3CG5140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching / Applications

 8.22. Size:1212K  kexin
pbss5160t-hf.pdf

PBSS5120T
PBSS5120T

SMD Type TransistorsPNP TransistorsPBSS5160T-HF (KBSS5160T-HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required

 8.23. Size:1741K  kexin
pbss5160t.pdf

PBSS5120T
PBSS5120T

SMD Type TransistorsPNP TransistorsPBSS5160T (KBSS5160T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required1.Base2.E

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