Справочник транзисторов. 2N563

 

Биполярный транзистор 2N563 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N563
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.3 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 0.3 MHz
   Ёмкость коллекторного перехода (Cc): 60 pf
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO5

 Аналоги (замена) для 2N563

 

 

2N563 Datasheet (PDF)

 0.1. Size:253K  motorola
2n5630 2n6030 2n5631 2n6031.pdf

2N563
2N563

Order this documentMOTOROLAby 2N5630/DSEMICONDUCTOR TECHNICAL DATANPN2N5630High-Voltage High Power2N5631TransistorsPNP. . . designed for use in high power audio amplifier applications and high voltage2N6030switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031VCEO(sus) = 120 Vdc 2N5630, 2N6030VCEO(sus) = 140 Vdc 2N5631, 2N603

 0.2. Size:26K  fairchild semi
2n5639.pdf

2N563
2N563

2N5639N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

 0.3. Size:26K  fairchild semi
2n5638.pdf

2N563
2N563

2N5638N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

 0.4. Size:67K  central
2n5629 2n5630 2n6029 2n6030.pdf

2N563

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.5. Size:51K  onsemi
2n5638 2n5639.pdf

2N563
2N563

2N5638, 2N56392N5638 is a Preferred DeviceJFET Chopper TransistorsN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for chopper and high-speed switching applications.Featureshttp://onsemi.com Low Drain-Source ON Resistance: RDS(on) = 30W for 2N5638RDS(on) = 60W for 2N56391 DRAIN Low Reverse Transfer Capacitance -

 0.6. Size:198K  onsemi
2n5631-d.pdf

2N563
2N563

2N5631High-Voltage - High PowerTransistorsHigh-voltage - high power transistors designed for use in highpower audio amplifier applications and high voltage switchingregulator circuits.http://onsemi.com High Collector Emitter Sustaining Voltage -VCEO(sus) = 140 Vdc16 AMPERE High DC Current Gain - @ IC = 8.0 AdchFE = 15 (Min)POWER TRANSISTORS Low Collector-Emitt

 0.7. Size:11K  semelab
2n5632.pdf

2N563

2N5632Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.8. Size:11K  semelab
2n5633.pdf

2N563

2N5633Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.9. Size:11K  semelab
2n5634.pdf

2N563

2N5634Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.10. Size:118K  jmnic
2n5629 2n5630.pdf

2N563
2N563

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIO

 0.11. Size:99K  jmnic
2n5631.pdf

2N563
2N563

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain Low collector-emitter saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION

 0.12. Size:103K  jmnic
2n5632 2n5633 2n5634.pdf

2N563
2N563

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SY

 0.13. Size:167K  cn sptech
2n5631.pdf

2N563
2N563

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N5631DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h = 15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CComplement to Type 2N6031APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regulator circuits.ABSOLUTE M

 0.14. Size:118K  inchange semiconductor
2n5629 2n5630.pdf

2N563
2N563

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

 0.15. Size:117K  inchange semiconductor
2n5631.pdf

2N563
2N563

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain@IC=8A Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESC

 0.16. Size:117K  inchange semiconductor
2n5632 2n5633 2n5634.pdf

2N563
2N563

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute m

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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