Биполярный транзистор PDTA124EM - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTA124EM
Маркировка: DH
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT883
Аналоги (замена) для PDTA124EM
PDTA124EM Datasheet (PDF)
pdta124emb.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pdta124es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA124ESPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdta124ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
pdta124et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088PDTA124ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3
pdta124eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA124EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 20Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplification of circuit designhandbook, 4 columns
pdta124ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA124EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Sep 09File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio
pdta124e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA124E seriesPNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdta124es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA124ESPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdta124ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
pdta124et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088PDTA124ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3
pdta124eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA124EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 20Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplification of circuit designhandbook, 4 columns
pdta124ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA124EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Sep 09File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf
PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu
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