Биполярный транзистор PDTA143EE
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTA143EE
Маркировка: 1
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SOT416
Аналоги (замена) для PDTA143EE
PDTA143EE
Datasheet (PDF)
..1. Size:57K motorola
pdta143ee 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit design
..2. Size:57K philips
pdta143ee 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit design
6.1. Size:58K motorola
pdta143eu 4.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EUFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
6.2. Size:56K motorola
pdta143et 4.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
6.3. Size:57K motorola
pdta143ek 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
6.4. Size:58K motorola
pdta143es 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistorPDTA143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
6.5. Size:58K philips
pdta143eu 4.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EUFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
6.6. Size:174K philips
pdta143e series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETPDTA143E seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 04Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
6.7. Size:56K philips
pdta143et 4.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
6.8. Size:57K philips
pdta143ek 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
6.9. Size:58K philips
pdta143es 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistorPDTA143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
6.10. Size:2803K nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf 
PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu
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