Справочник транзисторов. PDTC114TM

 

Биполярный транзистор PDTC114TM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PDTC114TM
   Маркировка: DT
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 2.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT883

 Аналоги (замена) для PDTC114TM

 

 

PDTC114TM Datasheet (PDF)

 6.1. Size:53K  motorola
pdtc114ts 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.2. Size:52K  motorola
pdtc114tk 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.3. Size:53K  motorola
pdtc114tu 3.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

 6.4. Size:51K  motorola
pdtc114te 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 6.5. Size:51K  motorola
pdtc114tt 3.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 6.6. Size:53K  philips
pdtc114ts 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.7. Size:52K  philips
pdtc114tk 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.8. Size:53K  philips
pdtc114tu 3.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

 6.9. Size:51K  philips
pdtc114te 2.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 6.10. Size:78K  philips
pdtc114tk pdtc114ts.pdf

PDTC114TM
PDTC114TM

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

 6.11. Size:51K  philips
pdtc114tt 3.pdf

PDTC114TM
PDTC114TM

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 6.12. Size:81K  philips
pdtc114t ser.pdf

PDTC114TM
PDTC114TM

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

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