Биполярный транзистор PDTC114TM - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC114TM
Маркировка: DT
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT883
Аналоги (замена) для PDTC114TM
PDTC114TM Datasheet (PDF)
pdtc114ts 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi
pdtc114tk 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi
pdtc114tu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3
pdtc114te 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces
pdtc114tt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces
pdtc114ts 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi
pdtc114tk 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi
pdtc114tu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3
pdtc114te 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces
pdtc114tk pdtc114ts.pdf
PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883
pdtc114tt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces
pdtc114t ser.pdf
PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050