Справочник транзисторов. PDTC143EU

 

Биполярный транзистор PDTC143EU - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PDTC143EU
   Маркировка: *02_p02_t02_W02
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 2.5 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT323

 Аналоги (замена) для PDTC143EU

 

 

PDTC143EU Datasheet (PDF)

 ..1. Size:58K  motorola
pdtc143eu 3.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 ..2. Size:58K  philips
pdtc143eu 3.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 6.1. Size:57K  motorola
pdtc143ek 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

 6.2. Size:56K  motorola
pdtc143ee 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.3. Size:58K  motorola
pdtc143es 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

 6.4. Size:56K  motorola
pdtc143et 4.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 6.5. Size:57K  philips
pdtc143ek 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

 6.6. Size:56K  philips
pdtc143ee 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.7. Size:58K  philips
pdtc143es 2.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

 6.8. Size:182K  philips
pdtc143e series.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143E seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 05Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.9. Size:56K  philips
pdtc143et 4.pdf

PDTC143EU
PDTC143EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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