Биполярный транзистор PDTC144EM - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC144EM
Маркировка: E7
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT883
Аналоги (замена) для PDTC144EM
PDTC144EM Datasheet (PDF)
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC144E seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050